Zobrazeno 1 - 10
of 241
pro vyhledávání: '"E.M. Conwell"'
Autor:
H.A. Mizes, E.M. Conwell
Publikováno v:
International Conference on Science and Technology of Synthetic Metals.
Summary form only given. We have setup an SSH type of hamiltonian for PPV by choosing a set of t/sub 0/, the transfer integral, /spl prop/ (=/spl part/t/sub 0/ / /spl part/u/) and K, the elastic constant, to match the known PPV valence band width, /s
Publikováno v:
International Conference on Science and Technology of Synthetic Metals.
Summary form only given. The isotope effect is calculated in a simple BCS-type model in which purely electronic attraction on C/sub 60/ molecules is modulated by zero point intramolecular motion, as first proposed by Chakravarty et.al. We have found
Publikováno v:
Synthetic Metals. 21:163-168
The CNDO/S3 molecular orbital model is applied to describe the electronic structure for different conformations of photogenerated radical cations of emeraldine, (C 6 H 5 )N(C 6 H 4 )N(C 6 H 4 )NH(C 6 H 4 )NH 2 , its hydrogenated and dehydrogenated fo
Autor:
I.A. Howard, E.M. Conwell
Publikováno v:
Le Journal de Physique Colloques. 44:C3-1487
Autor:
E.M. Conwell
Publikováno v:
Uspekhi Fizicheskih Nauk. 126:639-656
Publikováno v:
Synthetic Metals. 29:235-242
Solid-state nuclear magnetic resonance 13 C and 2 H measurements have been applied to characterize the structure and dynamics of three forms of polyaniline: emeraldine base, leucoemeraldine, and emeraldine hydrochloride. By comparison with the 13 C N
Publikováno v:
Chemical Physics Letters. 131:82-86
An analysis of the UV absorption spectra of polyemeraldine and nigrosine reveals that the absorption band which appears at about 2.2 eV in both compounds is due to the creation of a localized molecular exciton with the electron on a quinoid moiety an
Autor:
E.M. Conwell, N.C. Banik
Publikováno v:
Le Journal de Physique Colloques. 42:C7-315
Autor:
E.M. Conwell, M.O. Vassell
Publikováno v:
IEEE Transactions on Electron Devices. :22-27
Use of the drifted Maxwellian distribution is shown to be unjustified for GaAs samples in which the Gunn effect is usually observed, because the carrier concentration is much too low for electron-electron collisions to predominate. It is pointed out