Zobrazeno 1 - 10
of 58
pro vyhledávání: '"E.L. Peltzer y Blancá"'
Publikováno v:
Journal of Alloys and Compounds. 683:32-37
In the present work, we report an extensive theoretical and experimental study in order to understood and determinate the structural and magnetic ground state of the MnFe3N. For such purpose, ab-initio calculations based on the Density Functional Den
Autor:
Ariel Pablo Cedola, Marcelo Angel Cappelletti, G. A. Casas, B. Marí Soucase, E.L. Peltzer y Blancá
Publikováno v:
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname
instname
[EN] The effects of the offset level and of the doping level in the perovskite layer upon both the reverse saturation current (J0) and the series resistance (Rs) of p-p-n perovskite solar cells have been researched in this paper, using five different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3fe8cd992861dc1e831b5a25f201bf13
http://hdl.handle.net/10251/152820
http://hdl.handle.net/10251/152820
Autor:
E.L. Peltzer y Blancá, R. Napán
Publikováno v:
Anales AFA. 26:30-35
Cuando se trata de resolver el problema de la aplicacion de hidrogeno como un vector de energia, el almacenamiento y la portabilidad son factores importantes. Bajo esta premisa, los hidruros salinos, tales como el hidruro de litio aparecen como una a
Autor:
Ariel Pablo Cedola, Marcelo Angel Cappelletti, E.L. Peltzer y Blancá, Bernabé Marí Soucase, G. A. Casas
Publikováno v:
SEDICI (UNLP)
Universidad Nacional de La Plata
instacron:UNLP
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname
Universidad Nacional de La Plata
instacron:UNLP
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname
[EN] In this paper, a theoretical study of different p-p-n perovskite solar cells has been performed by means of computer simulation. Effects of the offset level upon the power conversion efficiency (PCE) of these devices have been researched using f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb8371cd949eb97ed1354d15ca16e344
https://www.sciencedirect.com/science/article/pii/S0749603617303087
https://www.sciencedirect.com/science/article/pii/S0749603617303087
Publikováno v:
Physica B: Condensed Matter. 407:3240-3243
The structural properties of the X Fe 3 N ( X =Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn) cubic ternary iron based nitrides as well as the preferential occupation site of X in the structure were studied using Full Potential Linearized Augmented Plane
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 629:392-395
An iterative method based on numerical simulations was developed to enhance the proton radiation tolerance and the responsivity of Si PIN photodiodes. The method allows to calculate the optimal values of the intrinsic layer thickness and the incident
Publikováno v:
Hyperfine Interactions. 161:197-202
In order to investigate some of the fundamental physical properties of the fcc-FeX (X=C, N) austenite solid solutions, we compare the hyperfine parameters obtained by Mossbauer 57Fe spectrometry and those obtained by the full-potential linear augment
Publikováno v:
Computational Materials Science. 32:85-95
A complete ab initio calculation of the optical properties of the semiconductor compounds PbS, PbSe and PbTe which crystallize in the rock-salt structure, is presented. The electronic structure has been obtained in two approximations for the exchange
The radiation resistance in InGaP/GaAs/Ge triple-junction solar cells is limited by that of the middle GaAs sub-cell. In this work, the electrical performance degradation of different GaAs sub-cells under 1 MeV electron irradiation at fluences below
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0f8f300598cffb379aa81c73907f346
http://hdl.handle.net/11583/2604773
http://hdl.handle.net/11583/2604773
A theoretical study of the electrical performance of p-on-n GaAs sub-cells under AM0, irradiated with 1 MeV electrons, has been carried out by means of computer simulation. Effects of both base and emitter carrier concentration upon radiation resista
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70561732f2a918cb2a8faa5fb1217758
http://hdl.handle.net/11583/2604777
http://hdl.handle.net/11583/2604777