Zobrazeno 1 - 10
of 27
pro vyhledávání: '"E.J. Crescenzi"'
Publikováno v:
2007 IEEE/MTT-S International Microwave Symposium.
A 2.5 watt average power (15 watt peak power) amplifier for application with WiMAX signal protocols has been constructed using small surface-mount GaN HEMT transistors. The GaN HEMT characteristics are uniquely suitable for producing high peak power
Autor:
Ferdo Ivanek, E.J. Crescenzi
Publikováno v:
2006 IEEE MTT-S International Microwave Symposium Digest.
Summary form only given. The past 50 years has included remarkable developments and commercial enterprises in microwave technology. The companies and institutions of the San Francisco Bay Area (and the so-called 'Silicon Valley') have earned an inter
Autor:
E.J. Crescenzi
Publikováno v:
2006 IEEE MTT-S International Microwave Symposium Digest.
The San Francisco Bay Area has long been recognized for entrepreneurship in "high tech" industries, and more specifically for innovative contributions to microwave technology. This was particularly true with regards to the application of this technol
Autor:
M.G. Walker, E.J. Crescenzi
Publikováno v:
MTT-S International Microwave Symposium Digest.
An amplifier covering 12-15 GHz with 22 dB gain and less than 5.0 dB noise figure using GsAs FETs with submicron gate length was constructed. Techniques used for device characterization and amplifier circuit synthesis along with measured data are pre
Publikováno v:
MTT-S International Microwave Symposium Digest.
The development of a Ku-band receiver front-end using microwave integrated circuit technology is described. The front end elements, including a GaAs FET RF balanced amplifier stage, an image reject mixer, and a varactor controlled GaAs FET oscillator
Publikováno v:
MTT-S International Microwave Symposium Digest.
A 2-6 GHz microwave limiting amplifier has been constructed using alternating MMIC limiters and GaAs FET amplifier stages. The function of the limiters is to restrict signal levels such that the gain stages operate in a linear region. A multistage pr
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest, 2005..
A Doherty amplifier has been constructed using small surface-mount 2-stage 30 W hybrid amplifier modules. These modules offer higher gain and simpler matching than do discrete transistors. This 26 dB gain Doherty amplifier uses a conventional 2-way t
Publikováno v:
Radio and Wireless Conference, 2003. RAWCON '03. Proceedings.
Small surface-mount power amplifiers have been developed that produce 30 watts of peak power in the PCS and UMTS frequency bands. These two-stage amplifiers exhibit typical gain of 28 dB with good linearity and efficiency under CDMA signal protocols.
Autor:
Jr. E.J. Crescenzi
Publikováno v:
2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).
A hybrid power amplifier module has been designed for application as an error amplifier in feedforward PAs for UNITS multi-channel operation. Error amplifiers require excess bandwidth, excellent gain flatness, and high linearity. Si LDMOS power devic
Autor:
Jr. E.J. Crescenzi
Publikováno v:
2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).
An inverted coplanar 3 dB quadrature coupler was developed for application in hybrid power amplifiers. The structure was realized on an alumina substrate using conventional thick-film construction. It includes direct microstrip interfaces and a bias