Zobrazeno 1 - 10
of 154
pro vyhledávání: '"E.I. Givargizov"'
Autor:
E.I. Givargizov, S.A. Grinberg
Volume 19 includes articles on growth of crystals from the vapor, from the melt, and from fluxes, as well as a section on actual structure of crystals and films relative to growth conditions.
Autor:
L. L. Aksenova, E. S. Mashkova, E. V. Rakova, V. A. Molchanov, N.A. Kiselev, V. V. Roddatis, E.I. Givargizov, John L. Hutchison, A.N. Stepanova
Publikováno v:
Micron
Diamond single crystals were grown on the silicon whiskers by a hot filament chemical vapor deposition technique at the filament temperature about 2100degreesC and the temperature of support 800degreesC. Specimens were examined by SEM, TEM, HRTEM and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73700f6c384d68c801023d5488a3f49a
https://ora.ox.ac.uk/objects/uuid:1a9ed5af-421a-46d5-8452-c5f59c240bc6
https://ora.ox.ac.uk/objects/uuid:1a9ed5af-421a-46d5-8452-c5f59c240bc6
Autor:
L. N. Obolenskaya, N. A. Kiselev, O. M. Zhigalina, E.I. Givargizov, V. I. Muratova, A.N. Stepanova
Publikováno v:
Crystallography Reports. 55:500-506
Nanowires have been prepared by the high-temperature oxidation of Si whiskers. The dependences of the nanowire formation on the oxidation parameters have been investigated. The oxidation rate is shown to depend on the whisker diameter. Oxidation in d
Autor:
E.I. Givargizov
Publikováno v:
Journal of Crystal Growth. 310:1686-1690
Principles of graphoepitaxy are briefly given with some demonstrations of its realization. It is considered that the approach to film crystallization is now renewed in relation to perspectives of bioelectronics and nanowire technology.
Publikováno v:
Journal of Crystal Growth. 310:847-852
The growth of biocrystalline films of catalase on amorphous substrates having a crystallographically symmetric microrelief (artificial epitaxy, or “graphoepitaxy”) was studied both under microgravity conditions in space and on the Earth. While hi
Autor:
N A Kiselev, L. N. Obolenskaya, A.N. Stepanova, V. I. Muratova, E.I. Givargizov, O M Zhigalina
Publikováno v:
Journal of Physics: Conference Series. 61:352-358
Regularities of nanowire formation by thinning silicon whiskers at high-temperature oxidation in the range 900-1050 °C were studied. The oxidation was performed in a flow of dry or wet oxygen. It is shown that a stopping of the oxidation process occ
Autor:
E.I. Givargizov
Publikováno v:
Crystallography Reports. 51:888-894
The growth of filamentary crystals (whiskers) on a single-crystal substrate through the vapour-liquid-solid mechanism is described. The possibility of fabricating oriented systems of whiskers on the basis of this mechanism of crystal growth is noted.
Autor:
E.I. Givargizov
Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these field
Autor:
J. L. Hatchison, E.I. Givargizov, E. V. Rakova, L. L. Aksenova, V. A. Molchanov, N. A. Kiselev, A.N. Stepanova, E. S. Mashkova
Publikováno v:
Crystallography Reports. 47:S159-S168
The data on the deposition, structure, and electric properties of crystalline diamond particles at silicon tips grown on single-crystal silicon substrates obtained over the last decade, mainly at the Institute of Crystallography of the Russian Academ
Publikováno v:
Journal of Applied Spectroscopy. 69:315-319
We have suggested and implemented a method of creation (growing) of sublimate‐screens formed by single‐crystal luminophor columns which are perpendicular to an amorphous (e.g., glass) substrate. The diameters of the columns are 3–5 μm, the hei