Zobrazeno 1 - 10
of 38
pro vyhledávání: '"E.H. te Kaat"'
Autor:
V.S. Varichenko, Lewis T. Chadderton, A. A. Melnikov, D. Fink, Wolfgang R. Fahrner, E.H. te Kaat, Salvador A. Cruz, Alexander M. Zaitsev, V. Hnatowicz
Publikováno v:
Radiation Effects and Defects in Solids. 132:81-90
Longitudinal dopant distribution along ion tracks in soft (polymers [1–5]) and hard (diamond [6,7]) condensed carbonaceous matter have been studied by neutron depth profiling and cathodoluminesence. Both in-diffusion from the aqueous phase and ener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25907e340e410bc5ecc0b3e85997b43b
https://doi.org/10.1080/10420159408224299
https://doi.org/10.1080/10420159408224299
Autor:
S. A. Fedotov, Wolfgang R. Fahrner, V.S. Varichenko, Alexander M. Zaitsev, E.H. te Kaat, A. A. Melnikov, F. F. Komarov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 82:421-430
The effect of channeling of high energy ions through latent tracks in solids is described theoretically by means of transport equations. It is shown that deep tails in implanted impurity and radiation damage depth distributions by high energy ion imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59e94c12d4fb87e1b57e9ffaa6250261
https://doi.org/10.1016/0168-583x(93)95991-d
https://doi.org/10.1016/0168-583x(93)95991-d
Autor:
V.S. Varichenko, E.H. te Kaat, W. R. Fahrner, Dietmar Fink, A. A. Melnikov, V. Hnatowicz, Salvador A. Cruz, Lewis T. Chadderton, Alexander M. Zaitsev
Publikováno v:
Radiation Effects and Defects in Solids. 126:247-250
(1993). Ion tracks in condensed carbonaceous matter. Radiation Effects and Defects in Solids: Vol. 126, No. 1-4, pp. 247-250.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7017fe2f330c17f7d11d23434427c9be
https://doi.org/10.1080/10420159308219719
https://doi.org/10.1080/10420159308219719
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :807-812
Si/Si3N4/Si(100) silicon on insulator (SOI) structures formed by keV ion beam synthesis have been irradiated with 6 MeV Ni ions at doses of 1 to 13 × 1017 Ni/cm2. The microstructure as well as the composition of unirradiated, as-implanted and furnac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5797102fc025bb91aa283d457bf1550e
https://doi.org/10.1016/0168-583x(93)90687-2
https://doi.org/10.1016/0168-583x(93)90687-2
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :655-659
Type-A/A/A heteroepitaxial layer systems of Si/NiSi 2 /Si with thicknesses of 2.8 μm/0.5 μm/bulk have been formed by ion beam synthesis using 6 MeV 58 Ni high-dose implantation into (111)-silicon and furnace annealing. The layer systems are charact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cd003321cf64c3ad68d906e134b8c56
https://doi.org/10.1016/0168-583x(91)95297-q
https://doi.org/10.1016/0168-583x(91)95297-q
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :726-730
Nitrogen ions with energies of 50 keV and 2 MeV were implanted into electrolytically polished samples of pure α-iron at room temperature (300 K). A method has been developed for preparing cross-sectional specimens which are suited for TEM investigat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b506e110ae51d8bd56ec1b732a81581f
https://doi.org/10.1016/0168-583x(91)95691-6
https://doi.org/10.1016/0168-583x(91)95691-6
Radiation damage and amorphization of (111) silicon after 2 MeV 14N ion implantation at temperatures from 125 to 450 K is studied in a dose range of 2 × 1013 to 5 × 1017 N cm−2 mainly by optical reflectivity depth profiling. Over a wide range of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::534a83184327f3fc9cac687e9013f5d3
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/17857
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/17857
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :279-284
High temperature (420-450 degrees C) N2+-implantations at 300 keV (150 keV per atom) into high resistivity p-type (001)-silicon substrates yield buried amorphous SiNx-layers for N-doses ranging from .1 to 1 x E18 cm-2. Thermal anneal at 1200 degrees
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::992bdb4d7d438dc4b6e4e4123725c969
https://doi.org/10.1016/s0168-583x(87)80057-5
https://doi.org/10.1016/s0168-583x(87)80057-5
Publikováno v:
Radiation Effects. 45:33-43
Primary and secondary defect profiles in silicon crystals have been investigated after 2 MeV and 80 keV Si+ irradiation by electronmicroscopy and optical reflectivity measurements. The primary irradiation damage leads to a more or less amorphous laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdb23a98cfcb9e86f9db3553d171986e
https://doi.org/10.1080/00337577908208406
https://doi.org/10.1080/00337577908208406
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 15:105-108
12 C and 14 N ions were implanted into silicon with intermediate energies between the validity regions of the LSS and Bethe-Bloch theories. Ranges were determined by optical reflectivity measurements at bevelled samples. A simple fitting formula for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b50c02608e84b37078364c52266c41c0
https://doi.org/10.1016/0168-583x(86)90263-6
https://doi.org/10.1016/0168-583x(86)90263-6