Zobrazeno 1 - 10
of 40
pro vyhledávání: '"E.H. Stevens"'
Autor:
E.H. Stevens
Publikováno v:
Microelectronics Journal. 15:15-23
Relationships between base region properties and the performance of very small geometry, bipolar transistors are discussed. It is shown that simultaneously obtaining high current gain, low sensitivity to ionic charge, and fast switching from logic ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e425e6df4bc0114db72f0ad42ad815f
https://doi.org/10.1016/s0026-2692(84)80128-7
https://doi.org/10.1016/s0026-2692(84)80128-7
Publikováno v:
Thin Solid Films. 92:165-169
A 70 kV focused Ga + beam was used to sputter patterns 100 μm long with various widths in SiO 2 /Si and GaAs wafers. V-shaped sputtered profiles were obtained when the beam was confined to regions of submicrometer width and the sputtered depths exce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5c08d7bf65a614b76261d6427cb6ad6
https://doi.org/10.1016/0040-6090(82)90199-7
https://doi.org/10.1016/0040-6090(82)90199-7
Autor:
E.H. Stevens
Publikováno v:
Microelectronics Journal. 14:15-20
The effects of contact resistance on the performance of very-small-geometry, CML gates are investigated. Relationships among specific contact resistivity, logic swing, noise margin, and power consumption per gate are derived. From these relationships
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e68dda88a9d757b444302b6770b048e7
https://doi.org/10.1016/s0026-2692(83)80127-x
https://doi.org/10.1016/s0026-2692(83)80127-x
Autor:
E.H. Stevens
Publikováno v:
Microelectronics Journal. 15:50-53
The use of measurements on a special MOSFET test structure for process control is reported. Test structure design, test methods and data analysis methods are described. Results derived from the test structure are presented and discussed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc076851b27184f7849bb21fe0ed99d7
https://doi.org/10.1016/s0026-2692(84)80007-5
https://doi.org/10.1016/s0026-2692(84)80007-5
Publikováno v:
Proceedings of the IEEE. 65:269-271
The speed limitations imposed on the laser trimming of active networks by trim-induced transients are discussed. It is predicted that for a majority of cases these transients rather than the measurement system will become the major speed limitation o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28d3a2e3b2587f3f0825946d5c0e1be9
https://doi.org/10.1109/proc.1977.10464
https://doi.org/10.1109/proc.1977.10464
Autor:
E.H. Stevens
Publikováno v:
IEEE Transactions on Electron Devices. 31:80-82
Small-geometry transistor structures resulting from oxide-and groove-isolated processes are described. Methods for accurate determination of saturation currents are described, Experimental results from the two transistor structures are given and disc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b058915745127f176a50e7db438fb446
https://doi.org/10.1109/t-ed.1984.21477
https://doi.org/10.1109/t-ed.1984.21477
Autor:
G.W. Eimers, E.H. Stevens
Publikováno v:
Solid-State Electronics. 15:721-723
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::009ab9cb04352b9c128039b76fca0920
https://doi.org/10.1016/0038-1101(72)90014-7
https://doi.org/10.1016/0038-1101(72)90014-7
Publikováno v:
1983 International Electron Devices Meeting.
Si MOSFET fabrication using focused ion beamsR.L. Kubena, J.Y. Lee, R.A. Juliens, R.G. Brault,P.L. Middleton, and E.H. StevensHughes Research Laboratories, Malibu, California 90265AbstractSubmicrometer focused ion beams have been used both for the ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a03cd0e8a246bc905dd57be9ba1b4008
https://doi.org/10.1109/iedm.1983.190569
https://doi.org/10.1109/iedm.1983.190569
Autor:
E.H. Stevens
Publikováno v:
IEEE Transactions on Electron Devices. 20:659-660
Closed-form expressions are derived for total thickness of the depletion region and thickness of the depletion region on the n side of the junction. The expressions are applicable to n-p junction devices with either complementary error function or Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b96dd27afc39013438f0e002c6890e7
https://doi.org/10.1109/t-ed.1973.17721
https://doi.org/10.1109/t-ed.1973.17721
Autor:
E.H. Stevens, G.W. Eimers
Publikováno v:
IEEE Transactions on Electron Devices. 18:1185-1186
A composite model, which includes both electrostatic screening and an interfacial region, is developed for Schottky diode barrier height. The model is used to calculate barrier height as a function of donor concentration for a gold-on-silicon diode s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f98ea79f6e9a5b43b0e11348beceb23
https://doi.org/10.1109/t-ed.1971.17353
https://doi.org/10.1109/t-ed.1971.17353