Zobrazeno 1 - 10
of 54
pro vyhledávání: '"E.G. Manoilov"'
Autor:
E.G. Manoilov
Publikováno v:
Optoèlektronika i poluprovodnikovaâ tehnika. 51:135-142
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::089c576db34ff042284f97365583f070
https://doi.org/10.15407/jopt.2016.51.135
https://doi.org/10.15407/jopt.2016.51.135
Autor:
I.M. Krishchenko, E.G. Manoilov, P.M. Litvin, O.Y. Gudymenko, S.B. Kriviy, E. B. Kaganovich, V. P. Kladko
Publikováno v:
Ukrainian Journal of Physics; Vol. 59 No. 9 (2014); 915
Український фізичний журнал; Том 59 № 9 (2014); 915
Scopus-Elsevier
Український фізичний журнал; Том 59 № 9 (2014); 915
Scopus-Elsevier
The influence of conditions occurring at the pulsed laser deposition of films with gold nanoparticles on the film porosity has been studied, by using the X-ray reflectometry. The films of two types were obtained by depositing particles (i) from the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4024526c38f3c3803e7dd1245f35e18
https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018528
https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018528
Autor:
D.V. Fedin, Yu.M. Litvin, V.G. Litovchenko, A.A. Evtukh, E.B. Kaganovich, S.V. Svechnikov, E.G. Manoilov
Publikováno v:
Materials Science and Engineering: C. 19:401-405
An array of field emitting tips made on silicon with coating nanocomposite film was made by a laser direct-write process. The laser was used in air: a single laser pulses forms a single conical tip and moved to create an array. In this process, the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e71964859ca86487f2d4b325eadfbdf
https://doi.org/10.1016/s0928-4931(01)00432-5
https://doi.org/10.1016/s0928-4931(01)00432-5
Publikováno v:
Journal of Alloys and Compounds. 451:209-211
This paper brings out the results on the comparison of luminescent characteristics – photoluminescence (PL) spectra, photoluminescence excitation (PLE) spectra, PL relaxation – of TbF3 and Tb0.957Sm0.038Ho0.003Pr0.002F3 (TSHPF) crystals. On the b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75c8728b6a73db534e41543a28e30b25
https://doi.org/10.1016/j.jallcom.2007.04.178
https://doi.org/10.1016/j.jallcom.2007.04.178
Publikováno v:
Technical Digest CLEO/Pacific Rim '97 Pacific Rim Conference on Lasers and Electro-Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4900e0a8783c8a0c975632a27c1ba36
https://doi.org/10.1109/cleopr.1997.610783
https://doi.org/10.1109/cleopr.1997.610783
Autor:
E.G. Manoilov
The evolution of time-resolved photoluminescence (PL) spectra in Au-doped nanocrystalline silicon films produced by laser ablation has been studied. The PL spectra with a relaxation time of nanoseconds are broad; they lie in the energy range 1.4-3.2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d31be26aa1cb3ce9c9142d248d0dd852
http://dspace.nbuv.gov.ua/handle/123456789/118034
http://dspace.nbuv.gov.ua/handle/123456789/118034
Autor:
R.I. Marchenko, A.A. Evtukh, V.G. Litovchenko, S.V. Svechnikov, E.G. Manoilov, E.B. Kaganovich
Publikováno v:
IEEE Conference Record - Abstracts. 1997 IEEE International Conference on Plasma Science.
Summary form only given. Commonly the Si tips of electron emitters are manufactured using the wet or dry etching formation routes. The aim of this work is to create Si field emitters without lithography by using new laser technology. Monocrystalline
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58b4f138a515c380b68fb919d21fdd13
https://doi.org/10.1109/plasma.1997.604379
https://doi.org/10.1109/plasma.1997.604379
Autor:
E.B. Kaganovich, S.V. Svechnikov, E.G. Manoilov, V.G. Litovchenko, Anatoliy Evtukh, Yu. M. Litvin
Publikováno v:
Physics, Chemistry and Application of Nanostructures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59a9ecd069858a34e91c1df8a7269406
https://doi.org/10.1142/9789812817990_0061
https://doi.org/10.1142/9789812817990_0061
We present results of electrical and photoelectrical measurements on two types of Al/porous silicon (PS)/monocrystalline silicon (c-Si)/Al sandwich structures with thin and thick PS layers obtained by stain etching. Current-voltage characteristics an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a3d2cd9ff16c50794619bdde5a20140
http://dspace.nbuv.gov.ua/handle/123456789/114664
http://dspace.nbuv.gov.ua/handle/123456789/114664
Publikováno v:
International Journal of Nanotechnology. 3:106
The analysis of original works devoted to preparation and investigation of nanocrystalline silicon (nc-Si) films containing Si quantum dots (QDs) that exhibit photoluminescence (PL) within the range 1.4 - 3.2 eV at room temperature is presented. Thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21a72afc5b10f53f88a818d9cd966c0c
https://doi.org/10.1504/ijnt.2006.008724
https://doi.org/10.1504/ijnt.2006.008724