Zobrazeno 1 - 10
of 410
pro vyhledávání: '"E.F. Schubert"'
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Y. Wang, Peter A. Losee, S. Balachandran, I. Bhat, T. Paul Chow, B.J. Skromme, J.K. Kim, E.F. Schubert
Publikováno v:
Materials Science Forum. :567-570
Low resistance p-layers are achieved in this paper using a graphite cap to protect SiC surface from out-diffusion of Si during high temperature post-implantation annealing, which is carried out to maximize the activation of Al dopant in 4H-SiC. With
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c79750e65d4adb4e6b599655db5987f
https://doi.org/10.4028/www.scientific.net/msf.556-557.567
https://doi.org/10.4028/www.scientific.net/msf.556-557.567
Publikováno v:
Materials Science and Engineering: B. 129:22-30
We have systematically carried out investigations on the growth of SiC epitaxial layers by varying C/Si ratio over the range of 0.5, 1.0, 3.0, 6.0, and 9.0 in the gas phase. The studies by an optical Nomarski microscope and an atomic force microscope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c2dd1222a042eeac888e6ccc568039e
https://doi.org/10.1016/j.mseb.2005.12.010
https://doi.org/10.1016/j.mseb.2005.12.010
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
IEEE Transactions on Electron Devices. 48:433-437
The minority electron diffusion length, L, in Mg-doped molecular beam epitaxy (MBE) grown p-type Al/sub x/Ga/sub 1-x/N/GaN superlattices with aluminum content x=0.1 and 0.2 was measured perpendicular and parallel to the superlattice planes by the ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2483956ddac8522b378c1a9cb777c44f
https://doi.org/10.1109/16.906432
https://doi.org/10.1109/16.906432
Autor:
J.J. Huang, H.-C. Kuo, S.-C. Shen, Q.-D. Zhuang, F.H. Yang, J.-H. Ryou, M.H. Kane, N. Arefin, T. Yamamoto, R.-H. Horng, D.-S. Wuu, C.-F. Lin, C.-F. Lai, C.-C. Lin, D.W. Lin, C.-H. Chiu, Z.Y. Li, Y.P. Lan, Y.-R. Wu, C.-Y. Huang, Y. Zhao, J.S. Speck, D.S. Meyaard, G.-B. Lin, J. Cho, E.F. Schubert, M.D.B. Charlton, Q. Hao, T. Qiu, P.K. Chu, J. Verma, A. Verma, V. Protasenko, S.M. Islam, D. Jena, Y.F. Cheung, Z. Ma, H.W. Choi, T.-T. Chen, C.-F. Dai, C.-P. Wang, H.-K. Fu, P.-T. Chou, W.Y. Yeh, X. Luo, R. Hu, R. Kotschenreuther, H. Hirayama, Y. Kotsar, E. Monroy, C.-F. Chen, J.D. Bullough
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ba405c74a8a01cf3ba021d4d92307fe
https://doi.org/10.1016/b978-1-84569-436-4.50026-3
https://doi.org/10.1016/b978-1-84569-436-4.50026-3
Autor:
R.F. Kopf, E.F. Schubert
Publikováno v:
Materials Science Forum. :53-66
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d055c6091c4aaa1ba0bed84b049c625f
https://doi.org/10.4028/www.scientific.net/msf.65-66.53
https://doi.org/10.4028/www.scientific.net/msf.65-66.53
Autor:
E.F. Schubert
Publikováno v:
Surface Science. 228:240-246
Optical absorption and photoluminescence experiments are performed on GaAs doping superlattices, which have δ-function-like doping profiles of alternating n- and p-type dopant sheets. Absorption and photoluminescence spectra reveal the clear signatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a51fffb6e6f69e38186f115bcc97eea
https://doi.org/10.1016/0039-6028(90)90301-n
https://doi.org/10.1016/0039-6028(90)90301-n
Autor:
E.F. Schubert
Publikováno v:
2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference.
This tutorial talk gives an overview of recent advances as well as future challenges in light-emitting diode technology for solid-state lighting applications. The discussion will include advanced nano-materials, packaging, and solid-state lighting sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4edcdc96b00c8147231e2ef0831a016c
https://doi.org/10.1109/cleo.2006.4628169
https://doi.org/10.1109/cleo.2006.4628169
Publikováno v:
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
A new white light emitting diode, the photon recycling semiconductor light emitting diode (PRS-LED) is demonstrated. The device consists of a GaInN/GaN LED emitting in the blue spectral range and an AlGaInP photon recycling semiconductor emitting at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38fe58800fd50b3a9dbe5125a8d2c604
https://doi.org/10.1109/iedm.1999.824226
https://doi.org/10.1109/iedm.1999.824226