Zobrazeno 1 - 10
of 114
pro vyhledávání: '"E.E. King"'
Akademický článek
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Autor:
M. D. Looper, Philip J. Kuekes, E.E. King, R. Stanley Williams, Steven C. Witczak, Jianhua Yang, Jon V. Osborn, Erica DeIonno, William M. Tong, Duncan Stewart
Publikováno v:
IEEE Transactions on Nuclear Science. 57:1640-1643
Semiconducting TiO2 displays non-volatile multi-state, hysteretic behavior in its I-V characteristics that can be exploited as a memory material in a memristive device. We exposed memristive TiO2 devices in the on and off resistance states to 45 Mrad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::783af656874b9d905c6e47c30a3263cd
https://doi.org/10.1109/tns.2010.2045768
https://doi.org/10.1109/tns.2010.2045768
Autor:
Ivan Linscott, J.L. Roeder, E.E. King, Umran S. Inan, S.C. Witczak, Stephen LaLumondiere, B. Mossawir, Jon V. Osborn
Publikováno v:
IEEE Transactions on Nuclear Science. 53:3439-3448
We have developed a radiation-hardened, highly linear, wideband, low-noise amplifier (LNA) with programmable gain to serve as the front-end of a plasma-wave instrument for satellite-based electric-field measurements of very low frequency (VLF) phenom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01ae550d47d656835e4ae787d7f43f3f
https://doi.org/10.1109/tns.2006.886219
https://doi.org/10.1109/tns.2006.886219
Publikováno v:
IEEE Transactions on Nuclear Science. 51:3615-3620
The use of annular MOSFET design, which has demonstrated total-dose radiation immunity in CMOS circuits, can improve the hot-carrier reliability of CMOS circuits by reducing the drain electric field compared to conventionally designed MOSFETs. A theo
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https://explore.openaire.eu/search/publication?articleId=doi_________::67e7b156a6f3740646ea5b236755cc74
https://doi.org/10.1109/tns.2004.839157
https://doi.org/10.1109/tns.2004.839157
Akademický článek
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Autor:
D.C. Mayer, Harold P. Hjalmarson, Marty R. Shaneyfelt, R.C. Lacoe, S.C. Witczak, E.E. King, G.L. Hash, N.S. Saks
Publikováno v:
IEEE Transactions on Nuclear Science. 49:2662-2666
The geometric component of charge pumping current was examined in n-channel metal-oxide-silicon field effect transistors (MOSFETs) following low-temperature irradiation. In addition to the usual dependencies on channel length and gate bias transition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aaad08b7f5c5100b3243977d4175617a
https://doi.org/10.1109/tns.2002.805987
https://doi.org/10.1109/tns.2002.805987
Publikováno v:
Microelectronics Reliability. 41:649-660
In this paper the underlying mechanisms that produce the cross-over in worst-case hot-carrier stress condition observed at room temperature in some deep submicron lightly doped drain (LDD) NMOS devices and at cryogenic temperatures for devices with l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec6501e7cb2c0dcceab11f4cd3f4f844
https://doi.org/10.1016/s0026-2714(01)00007-5
https://doi.org/10.1016/s0026-2714(01)00007-5
Publikováno v:
IEEE Transactions on Nuclear Science. 45:2624-2631
The relative importance of ionization and displacement damage effects in irradiated amorphous silicon (a-Si) solar cells is demonstrated. Degradation of these devices by particles representative of a space radiation environment is dominated by ionizi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a9c550663ed4f04ce5a5d133045f0fd
https://doi.org/10.1109/23.736506
https://doi.org/10.1109/23.736506
Publikováno v:
2011 International Reliability Physics Symposium.
The capacitors implemented in RF/microwave MMICs seem to dominate the reliability in many cases, rather than the active devices (pHEMTs or HBTs) themselves. We have examined MIMCAP extrinsic defect density by extracting it from published data availab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f51ecee557acd45539ce6fac290458e9
https://doi.org/10.1109/irps.2011.5784456
https://doi.org/10.1109/irps.2011.5784456
Publikováno v:
IEEE Transactions on Nuclear Science. 40:1342-1346
Bonded wafer substrates that are optimized for integrating high-energy-particle silicon detector arrays with their readout electronics have been fabricated. The detectors are processed in the handle wafer, which is a 300- mu m-thick, high-resistivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31a8cfd7c076d852f736c48592b59b18
https://doi.org/10.1109/23.234548
https://doi.org/10.1109/23.234548