Zobrazeno 1 - 10
of 46
pro vyhledávání: '"E.C. Vail"'
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 3:691-697
Widely continuously tunable sources are key elements for many applications. This paper discusses the first integrated laser able to continuously tune its wavelength more than 1%: the micromechanical tunable vertical-cavity surface-emitting laser (VCS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bed88137777145bd099e0873a5bc132a
https://doi.org/10.1109/2944.605722
https://doi.org/10.1109/2944.605722
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 1:234-243
Temperature dependent efficiency and modulation characteristics of strained quantum-well (QW) InGaAs-InGaAsP-InGaP 980-nm laser diodes of various designs are analyzed using self consistent carrier transport analysis including stimulated emission. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bddb3a4a3b3e2b599167eafc5c3078d9
https://doi.org/10.1109/2944.401202
https://doi.org/10.1109/2944.401202
Publikováno v:
Conference on Lasers and Electro-Optics Europe.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f970d428b4e4f8fa1b862d2bb4120de5
https://doi.org/10.1109/cleoe.1994.636729
https://doi.org/10.1109/cleoe.1994.636729
Publikováno v:
IEEE Photonics Technology Letters. 8:98-100
We demonstrate a resonant cavity wavelength tunable detector with a record 30-nm continuous tuning range, 17-dB extinction ratio, and a low 7-V tuning voltage. The detector map be biased to operate in one of two modes. In the first, the detector is t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f5dc33fe5e944504704a747a6ee4f62
https://doi.org/10.1109/68.475791
https://doi.org/10.1109/68.475791
Publikováno v:
IEEE Photonics Technology Letters. 6:1303-1305
The decrease of the differential efficiency of 0.98-/spl mu/m semiconductor lasers with temperature can make high power, high temperature applications difficult. We present an experimental and theoretical study of the temperature dependence of the in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21bf79a896c6c2a85188f01b7c713c8b
https://doi.org/10.1109/68.334820
https://doi.org/10.1109/68.334820
Publikováno v:
Conference Digest. 15th IEEE International Semiconductor Laser Conference.
We demonstrate a self-chirping VCSEL laser diode with a 10 nm bandwidth, sub-milliamp threshold, and 0.2 mW total power in a single mode. The self-chirping is achieved by integrating the VCSEL with a micromechanical resonator and biasing with a feedb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8749ed9ef06f654ecb68f92e5691a88a
https://doi.org/10.1109/islc.1996.558845
https://doi.org/10.1109/islc.1996.558845
Publikováno v:
Digest IEEE/Leos 1996 Summer Topical Meeting. Advanced Applications of Lasers in Materials and Processing.
Recent progress on micromechanically tuned vertical cavity lasers surface emitting lasers (VCSEL) and resonant cavity detectors is reviewed. Results of large continuous tuning range, low threshold and high power VCSEL and novel self-tracking tunable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c741b1d117d5cc0b017f5e9ec7594d0
https://doi.org/10.1109/leosst.1996.540787
https://doi.org/10.1109/leosst.1996.540787
Publikováno v:
Proceedings of LEOS'94.
Summary form only given. In this work, we present experimental and theoretical studies to explain the physical reasons for the temperature dependence of 980 nm lasers. The lasers we used are 6.5 /spl mu/m wide buried heterostructure (BH) InGaAs/InGaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ce36c299efb665649a781a5c8532691
https://doi.org/10.1109/leos.1994.586915
https://doi.org/10.1109/leos.1994.586915
Publikováno v:
Proceedings of IEEE 14th International Semiconductor Laser Conference.
Summary form only given. Temperature dependent efficiency and modulation characteristics of QW laser diodes of various design are analyzed using self-consistent carrier transport analysis including stimulated emission.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de266c11ee0b69ecc331febf20a7e9db
https://doi.org/10.1109/islc.1994.519156
https://doi.org/10.1109/islc.1994.519156
Publikováno v:
Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130).
We demonstrate direct modulation of a InGaAs flared semiconductor amplifier at 2.5 Gb/s at peak powers of 3.6 W (ave. power of 1.8 W). This is the highest single mode power from any high speed semiconductor source.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f9feaa78264afe4af0cdbaba02d285a
https://doi.org/10.1109/islc.1998.734149
https://doi.org/10.1109/islc.1998.734149