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pro vyhledávání: '"E.C. Niehenke"'
Akademický článek
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Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 50:846-857
This historical review is divided into three sections: microwave integrated circuits (MICs), monolithic microwave integrated circuits (MMICs), and MIC and millimeter-wave integrated-circuit applications.
Autor:
E.C. Niehenke, D.C. Webb
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 46:2187-2189
Akademický článek
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Autor:
T.E. Steigerwald, E.C. Niehenke
Publikováno v:
MTT-S International Microwave Symposium Digest.
Design and performance of a 40 dB gain X-band low-noise FET amplifier with integral overload protection is presented. Noise figures as low as 2 dB have been achieved using packaged transistors, including a multidiode overload protector that protects
Publikováno v:
MTT-S International Microwave Symposium Digest.
Design and performance of analog phase shifters using hyperabrupt varactors with linear phase versus voltage is presented. Phase linearity of 22 degrees per volt +-8 percent was achieved for a 100 degree S-band device with a phase deviation of 1 degr
Autor:
E.C. Niehenke
Publikováno v:
MTT-S International Microwave Symposium Digest.
A 14 oz, low noise, X-band parametric amplifier has been developed for an airborne environment (-55/spl deg/ to +71 /spl deg/C). This unit exhibits a 1.8 dB noise figure at 10 GHz and, at 18 dB peak gain, a 3 dB single-tuned bandwidth of 230 MHz that
Autor:
E.C. Niehenke
Publikováno v:
MTT-S International Microwave Symposium Digest.
Autor:
E.C. Niehenke
Publikováno v:
MTT-S International Microwave Symposium Digest.
A development effort is described that yielded a compact broadband module using soft and hard substrate material employing microstrip, slot line, and coplanar line. Integrated functions include coupling, limiting, up-conversion, downconversion, broad
Autor:
E.C. Niehenke, R.D. Hess
Publikováno v:
MTT-S International Microwave Symposium Digest.
Design and perfomance of an X-band microstrip bipolar varactor-tuned oscillator integrated with an FET amplifier is presented. Wide temperature operation (-55 to 71/spl deg/C), constant high power (0.5 W), low post-tuning drift (0.75 MHz) for 8-perce