Zobrazeno 1 - 10
of 57
pro vyhledávání: '"E.B. Liao"'
Autor:
V. Kripesh, E.B. Liao, N. Khan, Ranganathan Nagarajan, John H. Lau, Xiaowu Zhang, Vempati Srinivasa Rao, Ho Soon We, T.C. Chai, Sharon Pei Siang Lim, V. Lee
Publikováno v:
IEEE Transactions on Components and Packaging Technologies. 33:3-9
Portable electronic products demand multifunctional module comprising of digital, radio frequency and memory functions. Through silicon via (TSV) technology provides a means of implementing complex, multifunctional integration with a higher packing d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::138e7fe17a2e9aecc5ff2f5ff0f8675e
https://doi.org/10.1109/tcapt.2009.2037608
https://doi.org/10.1109/tcapt.2009.2037608
Autor:
G.Q. Lo, Andrew A. O. Tay, S. S. Ang, Ranganathan Nagarajan, Vaidyanathan Kripesh, H.H. Feng, E.B. Liao, Rajesh Kumar
Publikováno v:
IEEE Transactions on Advanced Packaging. 32:379-389
In this paper, a novel compliant chip-to-package interconnect, planar microspring, is presented in terms of design consideration, wafer-level fabrication process and mechanical characterization. Several spring designs have been evaluated, and results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de32af88b8ef9d48e8bac7b34eab7521
https://doi.org/10.1109/tadvp.2008.924247
https://doi.org/10.1109/tadvp.2008.924247
Autor:
Rong Yang, Dim-Lee Kwong, L.H. Guo, E.B. Liao, Guo-Qiang Lo, N. Balasubramanian, Q. X. Zhang, Hongyu Li, Min Tang, Aibin Yu
Publikováno v:
IEEE Transactions on Electron Devices. 55:2484-2491
In this paper, a novel platform technology for integrating radio-frequency microelectromechanical systems (RF-MEMS) and CMOS on a printed circuit board (PCB) is demonstrated. An RF-MEMS switch is constructed on top of a CMOS IC wafer. The stacked str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae9582bb28b239e1f82c8b3f6f9db95e
https://doi.org/10.1109/ted.2008.927398
https://doi.org/10.1109/ted.2008.927398
Autor:
Dim-Lee Kwong, Hongyu Li, N. Balasubramanian, E.B. Liao, L.H. Guo, Guo-Qiang Lo, Rakesh Kumar
Publikováno v:
IEEE Transactions on Electron Devices. 54:425-432
In this paper, radio frequency (RF), dc, and reliability performance have been studied on metal-insulator-metal (MIM) capacitors embedded in organic substrates. The MIM structure including ~74-nm SiN dielectric was prefabricated on Si and then transf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b75658ed893f9cf7b7412d465fa49271
https://doi.org/10.1109/ted.2006.890233
https://doi.org/10.1109/ted.2006.890233
Autor:
S. S. Ang, Andrew A. O. Tay, E.B. Liao, H.H. Feng, Ranganathan Nagarajan, Vaidyanathan Kripesh
Publikováno v:
IEEE Transactions on Components and Packaging Technologies. 29:560-569
This paper addresses fatigue and bridging issues by numerical analysis for an ultra-fine-pitch flip-chip interconnect that consists of multiple copper columns (MCC) and a solder joint. First, the processing flow is briefly presented, which enables pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36d62b123a988d9dd91174d96645cd8c
https://doi.org/10.1109/tcapt.2006.880509
https://doi.org/10.1109/tcapt.2006.880509
Autor:
W.Y. Loh, C.K. Cheng, G. Q. Lo, K. W. Teoh, Dim-Lee Kwong, H.Y. Li, L.H. Guo, N. Balasubramanian, H. M. Chua, L.K. Bera, N. Hwang, Q.X. Zhang, E.B. Liao, Zexiang Shen
Publikováno v:
IEEE Electron Device Letters. 27:538-541
This letter reports on a device layer transfer (based on thermal bonding and grinding backside Si) process and device characteristics of Si MOSFETs on a flexible substrate, focusing mainly on the mechanical bendability of the device and resistance to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcbd3300069e23e4b2ef6de73ad174d1
https://doi.org/10.1109/led.2006.876301
https://doi.org/10.1109/led.2006.876301
Autor:
S. S. Ang, E.B. Liao, H.H. Feng, Ranganathan Nagarajan, Andrew A. O. Tay, Vaidyanathan Kripesh
Publikováno v:
IEEE Transactions on Advanced Packaging. 29:343-353
This paper presents modeling and simulation results of a modified copper-column-based flip-chip interconnect with ultrafine pitch for wafer-level packaging, and the process and prototyping procedure are described as well. This interconnect consists o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f95b9130b9182d143c6bcc6c6d3b6dd4
https://doi.org/10.1109/tadvp.2005.853556
https://doi.org/10.1109/tadvp.2005.853556
Publikováno v:
Thin Solid Films. 504:252-256
By using thick photoresist AZ9260 and sputtered Ti film as masks, dry etching characteristics of benzocyclobutene (BCB), including etch rates, selectivities and sidewall profile, are investigated in CF4 / O2 and SF6 / O2 plasmas with various fluorine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54ffcb93bc86ce11ad8ec4b92bca9c4e
https://doi.org/10.1016/j.tsf.2005.09.159
https://doi.org/10.1016/j.tsf.2005.09.159
Publikováno v:
IEEE Electron Device Letters. 29:31-33
In this letter, a novel integration scheme, for metal-insulator-metal capacitors comprising perovskite-type dielectrics and Cu-based bottom electrodes, has been demonstrated on low-temperature FR4 packaging substrates. Cu oxidation during dielectric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26d3e904d9d811a6b18cc9868768de8c
https://doi.org/10.1109/led.2007.910778
https://doi.org/10.1109/led.2007.910778
Publikováno v:
IEEE Electron Device Letters. 26:885-887
For the first time, transferring the prefabricated capacitors on a silicon wafer onto FR-4 has been used to realize high-density metal-insulator-metal (MIM) capacitors on an organic substrate. A high capacitance density /spl sim/85 nF/cm/sup 2/ was a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9da8ade7b7eb845fc05f07c05b5de8eb
https://doi.org/10.1109/led.2005.859618
https://doi.org/10.1109/led.2005.859618