Zobrazeno 1 - 10
of 237
pro vyhledávání: '"E.A. Taft"'
Autor:
Porzio, Elena1 (AUTHOR) elena.porzio@cnr.it, Andrenacci, Davide2 (AUTHOR), Manco, Giuseppe1 (AUTHOR)
Publikováno v:
International Journal of Molecular Sciences. Dec2023, Vol. 24 Issue 23, p17028. 15p.
Publikováno v:
Journal of Physics and Chemistry of Solids. 44:1009-1013
The compound semiconductor boron subphosphide has, at low temperatures, an ideal stoichiometry of 6 boron atoms to 1 phosphorus atom. This unit cell contains Bi12P2 and has a density of 2.60 g cm 3 . It has been melted under inert gas pressure at 212
Publikováno v:
IEEE Transactions on Electron Devices. 27:170-175
InSb semiconductor technology required for infrared-detector-array fabrications is described. High-quality MOS, MOSFET, and linear and two-dimensional (2D) CID devices have been successfully fabricated. Interface-state densities of the MOS capacitors
Autor:
H.R. Philipp, E.A. Taft
Publikováno v:
Journal of Physics and Chemistry of Solids. 1:159-163
Photoelectric emission has been obtained both from evaporated films and from single crystals of CsI. For h ν h ν > 6 eV, the yield rises abruptly to much higher values in a reproducible way for all samples. This effect is attributed to emission fro
Publikováno v:
Journal of Crystal Growth. 17:276-287
Thin films of binary SiO 2 based mixed oxides are finding increasing use in the fabrication of silicon discrete devices and integrated circuits. The mechanical and chemical properties of these glasses, and thus their use in the fabrication of any spe
Autor:
H.R. Philipp, E.A. Taft
Publikováno v:
Journal of Physics and Chemistry of Solids. 3:1-6
Photoelectric emission from the valence band, previously measured for CsI, has been investigated in the other alkali iodides and several other halides. As in CsI, the yields rise rapidly from the threshold to values of order 0.1 electron/incident pho
Publikováno v:
Environmental Microbiology; Oct2023, Vol. 25 Issue 10, p1765-1784, 20p