Zobrazeno 1 - 10
of 33
pro vyhledávání: '"E.A. Hijzen"'
Autor:
S. Nuttinck, E.A. Hijzen, C.J.J. Dachs, Andries J. Scholten, F. Cubaynes, C. Detcheverry, L.F. Tiemeijer
Publikováno v:
IEEE Transactions on Electron Devices. 53:153-157
For the first time, the effects of poly depletion on the RF noise performance of advanced CMOS transistors are reported and analyzed. Based on measurements and physical device simulations we quantify the increasing danger of poly gate depletion with
Autor:
C.W.E. van Eijk, E.M. Schooneveld, Pasqualina M. Sarro, R.W. Hollander, E.A. Hijzen, A. van den Bogaard
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 348:470-474
Until now silicon drift detectors with two dimensional position resolution made use of drift time measurement in one dimension only. The resolution in the other dimension was obtained by dividing the collecting anode into small pixels. In this paper
Autor:
Pasqualina M. Sarro, E.M. Schooneveld, R.W. Hollander, C.W.E. van Eijk, E.A. Hijzen, A. van den Bogaard
Publikováno v:
IEEE Transactions on Nuclear Science, 41 (4)
In this paper we present two new ideas for drift detectors with two dimensional position resolution. The first idea is based on the regular drift detector, but has a slightly different design in order to deal with diffusion problems. The second idea
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 335:271-275
In this paper we present a new drift detector design, which diminishes the effect of lateral diffusion. This is achieved by giving the strips a saw tooth shape. In this way a small electric field in the direction parallel to the surface and perpendic
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 326:263-266
A silicon drift chamber (SDC) is an attractive device for the position-sensitive detection of low-energy radiation. In case of X-ray detection the start signal has to be generated internally. Results of computer simulations are presented showing that
Autor:
L.J. Choi, Guillaume Boccardi, P. Meunier-Beillard, Roger Loo, S. Van Huylenbroeck, Eddy Kunnen, G. Wmderickx, B. De Vos, F.C. Voogt, D. Baute, J.J.T.M. Donkers, W. D. van Noort, F. Vleugels, G.A.M. Hurkx, E.A. Hijzen, Mark C. J. C. M. Kramer, Tony Vanhoucke, Stefaan Decoutere, A. Sibaja-Hernandez, R.M.T. Pijper, S. Peeters, Rafael Venegas, T. Vandeweyer
Publikováno v:
2007 IEEE International Electron Devices Meeting.
In this paper we describe a novel fully self-aligned HBT architecture, which enables a maximum reduction of device parasitics. TCAD simulations show that this architecture is capable of achieving fT/fmax values of 295/425 GHz for an effective emitter
Autor:
Philippe Leray, F. Vleugels, W.D. van Noort, A. Piontek, Eddy Kunnen, L.J. Choi, F. Neuilly, J.J.T.M. Donkers, S. Van Huylenbroeck, Stefaan Decoutere, E.A. Hijzen, Rafael Venegas, A. Sibaja-Hernandez, P. Meunier-Beillard
Publikováno v:
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
A novel isolation scheme is presented in this work, which uses oxide filled cavities in the collector to separate the extrinsic base and collector regions. When incorporated in our 0.13μm SiGe:C BiCMOS technology, a further improvement of the device
Autor:
E.M. Schooneveld, E.A. Hijzen, R.W. Hollander, C.W.E. van Eijk, A. van den Bogaard, Pasqualina M. Sarro
Publikováno v:
1993 IEEE Conference Record Nuclear Science Symposium and Medical Imaging Conference.
Publikováno v:
ISSUE=15;STARTPAGE=173;ENDPAGE=176;TITLE=15th International Symposium on Power Semiconductor Devices and ICs 2003
For the first time trench sidewall effective electron mobility (/spl mu//sub eff/) values were determined by using the split capacitance-voltage (CV) method for a large range of transversal effective field (E/sub eff/) from 0.1 up to 1.4 MV/cm. The i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0db2108f6cd9b5c45ba5e3645aa4d3d5
https://research.utwente.nl/en/publications/81478f66-5bd6-4f48-abbb-4b067d23533f
https://research.utwente.nl/en/publications/81478f66-5bd6-4f48-abbb-4b067d23533f
Autor:
E.M. Schooneveld, C.W.E. van Eijk, A. van den Bogaard, E.A. Hijzen, R.W. Hollander, Pasqualina M. Sarro
Publikováno v:
Proceedings of 1994 IEEE Nuclear Science Symposium - NSS'94.
Previously we introduced a new drift detector design, that diminishes the effect of lateral diffusion. This is achieved by giving the strips a saw tooth shape. In this way a small electric field in the direction parallel to the surface and perpendicu