Zobrazeno 1 - 10
of 92
pro vyhledávání: '"E.A. Hendriks"'
Publikováno v:
Optical engineering, 50 (3)
Optical Engineering, March, 3, 50
Optical Engineering, March, 3, 50
We evaluate the performance of different key-point detectors and region descriptors when used for automatic classification of small sea targets in infrared video. In our earlier research performed on this subject as well as in other literature, many
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2458c0157c65e2a986faec21c0f06132
http://resolver.tudelft.nl/uuid:b65eb787-059a-49fc-bc4d-433360c51cd3
http://resolver.tudelft.nl/uuid:b65eb787-059a-49fc-bc4d-433360c51cd3
Publikováno v:
HPCS
In this paper, we describe experiences with our 127-node/161-processor Alpha cluster estbed, Ed. Ed is unique for two distinct reasons. First, we have replaced the standard BIOS on the cluster nodes with the Linux BIOS which loads Linux directly from
Autor:
E.A. Hendriks
Publikováno v:
Proceedings. Seventh International Conference on High Performance Computing and Grid in Asia Pacific Region, 2004..
This work presents an alternate method for discovering new switches and comparing switches when mapping a Myrinet network. Existing methods for mapping Myrinet networks rely on timeouts and are prone to false negatives due to network deadlock. Our al
Autor:
E.A. Hendriks, B.J. Lei
Publikováno v:
ICIP (3)
In this paper we propose a middle view stereo representation (MVSR) to efficiently utilize the bandwidth and ease the implementation of a view-adaptive teleconference system. We show that the MVSR can be used to reconstruct a high quality view from a
Publikováno v:
Physica B+C, 147(2-3), 297-304. North-Holland Publ Co
We have investigated the drain current-drain voltage characteristics and the spectral noise intensity of the drain current of (111) n-channel MOSFET's at T = 4.2 K. At T = 4.2 K the drain current-drain voltage characteristics showed a hysteresis whic
Autor:
R.J.J. Zijlstra, E.A. Hendriks
Publikováno v:
Solid-State Electronics. 31:1105-1111
We have measured the 1/f-noise in the drain current of n -channel (100) Si-MOSFET in the temperature range 4.2 K–295 K as a function of drain voltage. At T = 4.2 K the 1/f-noise has also been measured as a function of gate voltage. At temperatures
Autor:
R.J.J. Zijlstra, E.A. Hendriks
Publikováno v:
Solid-State Electronics. 31:171-180
Noise in the drain current of (100) n -channel Si-MOSFETs was investigated as a function of both source-drain voltage and gate voltage, from T = 4.2 to 295 K. The frequency range covered was from 1 to 250 kHz. Three contributions to the noise could b
Autor:
R.J.J. Zijlstra, E.A. Hendriks
Publikováno v:
Physica B+C. 147:291-296
The spectral noise intensity of the drain current of an n-channel (100) Si-MOSFET in strong inversion was measured as a function of drain current and gate voltage at T = 4.2 K. In addition to flicker noise and white noise it was possible to distingui
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