Zobrazeno 1 - 10
of 32
pro vyhledávání: '"E.-X. Ping"'
Autor:
E. X. Ping, Hongxing Jiang
Publikováno v:
Physical Review B. 47:2101-2106
Exciton binding energies of heavy- and light-hole excitons affected by charge-carrier screening in GaAs-Al„Ga& As quantum wells are calculated by the variational-perturbation method. The exciton binding energies are found to decrease rapidly when t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68b168a186715b740bbf6a3e2aa4eda1
https://doi.org/10.1103/physrevb.47.2101
https://doi.org/10.1103/physrevb.47.2101
Publikováno v:
Physical Review B. 41:12949-12952
Experimentally observed two-exponential decay of excitonic transitions in GaAs-${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As multiple quantum wells has been successfully interpreted in terms of the exciton transfe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5805f31fd3a85bf123a299540bf4720e
https://doi.org/10.1103/physrevb.41.12949
https://doi.org/10.1103/physrevb.41.12949
Autor:
E.-X. Ping
Publikováno v:
Proceedings of LEOS'94.
This paper reports on the analytical study of TE waves propagating in a cylindrical dielectric waveguide clad by periodic dielectric. The results suggest that waves propagating in such system are characterized by the features of the waves propagating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb723cc1159d769d373c69d261eb2880
https://doi.org/10.1109/leos.1994.586504
https://doi.org/10.1109/leos.1994.586504
Publikováno v:
MRS Proceedings. 377
We discuss the preparation, properties and device potential of microcrystalline Si:H (μc-Si:H) material deposited using plasma-CVD techniques. We have been able to deposit high quality μc-Si:H using both glow discharge and ECR plasma CVD techniques
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95cdc67c76a39da5f755ac7c76193c06
https://doi.org/10.1557/proc-377-137
https://doi.org/10.1557/proc-377-137
Publikováno v:
MRS Proceedings. 336
We discuss the growth of a-Si:H Materials and devices using a low pressure remote ECR plasma. We show that by using this plasma in an etching mode with a high H flux, we can grow high quality a-Si:H films at high temperatures (325–375 C). These fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc4122b914255f15de94f057a70538ad
https://doi.org/10.1557/proc-336-335
https://doi.org/10.1557/proc-336-335
Autor:
E.-X. Ping
Publikováno v:
Electronics Letters. 30:291-292
The transmission of a generalised wave, which reproduces the plane, cylindrical and spherical waves as special cases, propagating in single dielectric and multiple dielectric layer systems, is studied by the transfer matrix method. Interesting proper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13d7c834a43344feb6909c3a4886a3d1
https://doi.org/10.1049/el:19940211
https://doi.org/10.1049/el:19940211
Autor:
E.-X. Ping
Publikováno v:
Electronics Letters. 29:1838
The transmission of planar, cylindrical and spherical waves has been studied for single dielectric layer, resonant tunnelling and multiple period Bragg reflector systems. Interesting features originating from the geometry are found in the cylindrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a0659fdc87888cac55f691202212a6d
https://doi.org/10.1049/el:19931223
https://doi.org/10.1049/el:19931223
Publikováno v:
IEEE Transactions on Electron Devices; Mar98, Vol. 45 Issue 3, p609, 11p, 3 Black and White Photographs, 2 Charts, 10 Graphs
Autor:
E. X. Ping, Hongxing Jiang
Publikováno v:
Physical Review B. 40:11792-11798
Resonant tunneling of double-barrier quantum wells (DBQW's) affected by interface roughness has been investigated. Our results show that interface roughness induces oscillation resonant structure around the principal resonant peak. EA'ects of interfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c50e27b8091e0a99bd16f6e5c71c8c07
https://doi.org/10.1103/physrevb.40.11792
https://doi.org/10.1103/physrevb.40.11792
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