Zobrazeno 1 - 5
of 5
pro vyhledávání: '"E.-O. Andersen"'
Autor:
E.-O. Andersen, K. van der Zanden, Y. Gong, L. Pescini, R. Allinger, R. Kakoschke, J.R. Power
Publikováno v:
Solid-State Electronics. 52:550-556
We have successfully integrated 2 Mb arrays with SiO2/Al2O3 stacks as inter-poly dielectric (IPD) fabricated in a proven 130 nm embedded Flash technology. Gate stack write/erase high voltages (HV) can be reduced by 3 V. Write/erase distributions show
Autor:
T. Kern, Robert Strenz, J. Hsiao, C. T. Hsieh, Y. T. Lin, G. Tempel, R. Duschl, A. Gratz, E. Suryaputra, K. Ho, A. Iserhagen, J.R. Power, C. Bukethal, V. Pissors, M. Rohrich, H. H. Kuo, C. M. Huang, C. H. Tan, R. Ullmann, W. Dickenscheid, D. Shum, L. C. Tran, S. Paprotta, W. Langheinrich, E. O. Andersen, C. W. Hung, C. W. Ho
Publikováno v:
2012 4th IEEE International Memory Workshop.
A split-gate (SG) flash memory cell has been embedded in a 65nm ground-rule high performance (HP) CMOS logic process with copper low K interconnects. A gate spacer processing sequence self-aligned (SA) process provides a reliability-robust cell and h
Autor:
K. van der Zanden, E.-O. Andersen, D. Shum, G. Tempel, W. Langheinrich, R. Allinger, R. Kakoschke, L. Pescini, Robert Strenz, J.R. Power, Y. Gong
Publikováno v:
2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop.
We report Flash cell write/erase and reliability data from a 2Mb demonstrator processed using a 0.13 mum based eFlash technology comprising the high-k material, aluminum oxide (Al2O3) within the inter-poly dielectric (IPD) layer. With bottom and top-
Publikováno v:
Journal of Cerebral Blood Flow & Metabolism. 9:381-387
Purulent meningitis is a serious disease that often has a lethal outcome or gives lasting complications due to brain damage. The processes causing brain dysfunction or damage are still not uncovered nor are the reasons for the characteristic increase
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