Zobrazeno 1 - 10
of 67
pro vyhledávání: '"E. de la Puente"'
Autor:
O. A. Capera Rodríguez, Z. A. Palomeque Sánchez, S. E. de la Puente Molina, J. L. Espitia Ticora
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 844:012002
This document evaluates and compares the modular construction system against the conventional construction system, analyzing it from the triangle of the triple restriction of the PMBOK guide (5th edition), which corresponds to the analysis of the sco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47c4a9cd9a1a68ae40b12b2789729963
https://doi.org/10.1088/1757-899x/844/1/012002
https://doi.org/10.1088/1757-899x/844/1/012002
Autor:
Alberto Bergareche, A. de Arce, A. López de Munain, J. J. Poza, Cristina Sarasqueta, J.F. Martí-Massó, E. De la Puente
Publikováno v:
Journal of Neurology. 251:340-345
To assess the prevalence of Parkinson’s disease and parkinsonism in two Spanish populations (Irun and Hondarribia, Bidasoa Region) and to compare the results with those of similar surveys. The survey included 2000 participants aged 65 years or olde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a73c29939e3f6b5a2883bb002917a9cb
https://doi.org/10.1007/s00415-004-0333-3
https://doi.org/10.1007/s00415-004-0333-3
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :246-251
Optical techniques can provide nondestructive, contactless determinations of free-charge density in doped semiconductors. We discuss the use of photoluminescence spectra to evaluate the free-charge density of doped semiconductor layers obtained by io
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::291f13e6caa730990bd7a57961867ce9
https://doi.org/10.1016/s0168-583x(01)00449-9
https://doi.org/10.1016/s0168-583x(01)00449-9
Autor:
B. Gérard, Oscar Martínez, E. de la Puente, E. Gil-Lafon, Juan Jiménez, Miguel Angel González, Manuel Avella
Publikováno v:
Materials Science and Engineering: B. 80:197-201
High quality GaAs layers on silicon substrates were grown by conformal growth. In this technique, the GaAs conformal growth is initiated on the sidewalls of GaAs seed stripes (typically 10 μm wide with a pitch of 200 μm) grown conventionally on a S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aaefa3a819eb0cfc97a4f1e05c6831c8
https://doi.org/10.1016/s0921-5107(00)00631-0
https://doi.org/10.1016/s0921-5107(00)00631-0
Publikováno v:
Journal of Crystal Growth. 210:220-225
Hydride vapor phase epitaxy GaN layers were studied by electron beam induced current (EBIC), cathodoluminescence (CL) and scanning photoluminescence (SPL). Both blue and yellow luminescence distributions were studied, showing spatial correlation. CL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9760d7c5069e1894a268d01b65d3db87
https://doi.org/10.1016/s0022-0248(99)00683-1
https://doi.org/10.1016/s0022-0248(99)00683-1
Publikováno v:
Journal of Crystal Growth. 210:198-202
Conformal growth of GaAs on Si consists of the confined lateral selective epitaxy of GaAs from GaAs oriented seeds on silicon, the vertical growth being stopped by an overhanging dielectric mask. Low defect GaAs films are obtained due to the absence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3aaebc261bce164300b12c1327e370dd
https://doi.org/10.1016/s0022-0248(99)00678-8
https://doi.org/10.1016/s0022-0248(99)00678-8
Publikováno v:
Physical Review B. 56:7607-7614
Ab initio perturbed ion calculations are reported for neutral stoichiometric (MgO) n (n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b3a1e7fe90875e490aeb3e19a5ed0ba
https://doi.org/10.1103/physrevb.56.7607
https://doi.org/10.1103/physrevb.56.7607
Autor:
E. de la Puente-Campano, J. Alonso, J.C. Manuel, J.L. Alonso, M.J. Fernández, J. Corral, J.M. Barcena
Publikováno v:
Cirugía Española. 71:40-42
Resumen Se presenta el caso clinico de una paciente afectada de endometriosis en ambos ovarios y colon sigmoideo, que comenzo de forma brusca con rotura de un endometrioma en ovario izquierdo y que en el diagnostico anatomopatologico se informo de ad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fe5356d0d09551ee20df83de0f2c668
https://doi.org/10.1016/s0009-739x(02)71924-6
https://doi.org/10.1016/s0009-739x(02)71924-6
Publikováno v:
Cortex. 26:651-655
This report describes a case of apraxia caused by a right sided sub-cortical lesion. Performance on test for apraxia was impaired. A new type of error which involved demonstrating the use of objects on one's own body is reported. Some theoretical int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90f515a699404cc49057e11e036c44b4
https://doi.org/10.1016/s0010-9452(13)80314-0
https://doi.org/10.1016/s0010-9452(13)80314-0
Autor:
A, Bergareche, E, De La Puente, A, López de Munain, C, Sarasqueta, A, de Arce, J J, Poza, J F, Martí-Massó
Publikováno v:
Journal of neurology. 251(3)
To assess the prevalence of Parkinson's disease and parkinsonism in two Spanish populations (Irun and Hondarribia, Bidasoa Region) and to compare the results with those of similar surveys.The survey included 2000 participants aged 65 years or older i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::31b56910e0aa0c0317f115ef4cd66d74
https://pubmed.ncbi.nlm.nih.gov/15015016
https://pubmed.ncbi.nlm.nih.gov/15015016