Zobrazeno 1 - 10
of 33
pro vyhledávání: '"E. de Fresart"'
Publikováno v:
Journal of Applied Physics. 71:4820-4825
The thermal relaxation of SiGe films deposited by ultrahigh‐vacuum chemical vapor deposition was studied by annealing the films for times up to 21/2 h at a temperature of 950 °C. Strain relaxation was determined by misfit dislocation density obtai
Autor:
David L. Harame, James H. Comfort, E. de Fresart, Scott R. Stiffler, Bernard S. Meyerson, C.L. Stanis
Publikováno v:
Journal of Applied Physics. 70:1416-1420
The thermal stability of SiGe films deposited by ultrahigh‐vacuum chemical vapor deposition was studied. Various Ge compositional profiles, including boxes, trapezoids, and triangles were examined. Planar‐view transmission electron microscopy was
Autor:
J. Heddleson, G. Nivison, W. Cowden, D. Blomberg, Julie Morrison, W. Paulson, Patrice M. Parris, V. Venkatesan, D. Collins, B. Baumert, E. de Fresart, R. De Souza
Publikováno v:
Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.
This paper presents the integration of multivoltage analog and power devices into a 0.25 /spl mu/m CMOS + flash memory process based on Motorola's HiPerMOS/spl trade/ platform. A variety of MOSFETs and BJTs with breakdown voltage ranging from 10 V to
Autor:
C. Stein, M. Hong, Gordon Tam, Yee-Chaung See, L. Knoch, A. Zlotnicka, E. de Fresart, M. Racanelli, John W. Steele, K. Evans
Publikováno v:
IEEE Electron Device Letters. 14:450-452
High-performance Si and SiGe epitaxial base bipolar transistors have been fabricated using a commercially available, reduced pressure, epitaxial reactor. The SiGe devices exhibit exceptional Early voltages in the range of 400-500 V, and an f/sub T/ o
Autor:
David L. Harame, J.Y.-C. Sun, James H. Comfort, G. Scilla, E. de Fresart, J.M.C. Stork, Joachim N. Burghartz, Emmanuel F. Crabbe, Bernard S. Meyerson, Gary L. Patton
Publikováno v:
IEEE Electron Device Letters. 11:171-173
The fabrication of silicon heterojunction bipolar transistors which have a record unity-current-gain cutoff frequency (f/sub T/) of 75 GHz for a collector-base bias of 1 V, an intrinsic base sheet resistance (R/sub bi/) of 17 k Omega / Square Operato
Autor:
G. J. Scilla, David L. Harame, J.M.C. Stork, Joachim N. Burghartz, Emmanuel F. Crabbe, James H. Comfort, E. de Fresart, Gary L. Patton, Bernard S. Meyerson, J.Y.-C. Sun
Publikováno v:
Digest of Technical Papers.1990 Symposium on VLSI Technology.
Experimental results for maximum cut-off frequency (fT) values of 75 and 52 GHz were achieved for SiGe-base and Si-base bipolar transistors with intrinsic base sheet resistances in the 10-17 kO/square range. These results extend the speed of silicon
Autor:
E. de Fresart, K.K. Chan, Emmanuel F. Crabbe, J.M.C. Stork, M. Dimeo, David L. Harame, R.C. McIntosh, A.A. Bright, Gary L. Patton, Bernard S. Meyerson, A.C. Megdanis, C.L. Stanis, E. Petrillo, G. J. Scilla, M.P. Manny
Publikováno v:
Digest of Technical Papers.1990 Symposium on VLSI Technology.
Experimental results are presented on the use of N-type ultrahigh-vacuum/chemical vapor deposition (UHV/CVD) low-temperature epitaxy (LTE) to deposit thin (45 nm), heavily doped (1t1019 cm-3) SiGe films to form the base of PNP transistors. To take fu
Autor:
E. de Fresart, James H. Comfort, C.L. Stanis, Scott R. Stiffler, Bernard S. Meyerson, David L. Harame
Publikováno v:
Journal of Applied Physics. 70:7194-7194
Autor:
E. de Fresart, G. Bai, David N. Jamieson, M. A. Nicolet, Kang L. Wang, Robert Hull, Yung-Chung Kao
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5:745
In this paper, we report a study of the strain and its relaxation of epitaxial CoSi2 grown on Si by molecular beam epitaxy (MBE). The strain is measured by a x-ray rocking curve technique and misfit dislocations are determined by transmission electro
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 4:645
Very thin cobalt silicide films of several atomic compositions from Co to CoSi2 have been grown by thermal reaction of Co deposited at room temperature and by molecular beam epitaxy on Si〈111〉 substrates under ultrahigh vacuum conditions. They we