Zobrazeno 1 - 10
of 56
pro vyhledávání: '"E. Zielińska-Rohozińska"'
Publikováno v:
physica status solidi (a). 203:3633-3639
Strains and defects due to deposition of layered GaN/AlGaN heteroepitaxial structures generated both in α-sapphire substrates and the layers were studied by X-ray high-resolution diffraction and diffuse scattering. Dislocation loops in α-sapphire w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8806134ad69c8867ef915f4a31c66def
https://doi.org/10.1002/pssa.200622255
https://doi.org/10.1002/pssa.200622255
Publikováno v:
Journal of Alloys and Compounds. 362:287-292
The morphology of hexagonally shaped coherent domains in undoped and Si-doped GaN has been characterised by X-ray determination of lateral and vertical correlation lengths and the twist ( α Φ ) and tilt ( α Ω ) angles. In the present paper all me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d315ca471efabade9be1f4cfbd85be7b
https://doi.org/10.1016/s0925-8388(03)00600-5
https://doi.org/10.1016/s0925-8388(03)00600-5
Publikováno v:
Crystal Research and Technology. 38:951-955
AlxGa1-xN/GaN (Si doped or undoped) with the Al content in the composition range of 0.046 ≤ x ≤ 0.164 grown on the c sapphire face by atmospheric pressure MOCVD method were studied by high resolution x-ray diffraction including symmetrical and as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0fa416149e8c7883513e52a3599ff2c
https://doi.org/10.1002/crat.200310119
https://doi.org/10.1002/crat.200310119
Publikováno v:
Materials Science and Engineering: B. :441-444
The effect of Si doping ( N Si ∼3×10 18 cm −3 ) on crystalline quality of GaN epitaxial layers grown on sapphire c face was studied by high resolution X-ray diffraction including several Bragg reflections in different scan directions, reciprocal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0b8d1a8cf1840991d6a780675772be4
https://doi.org/10.1016/s0921-5107(01)00996-5
https://doi.org/10.1016/s0921-5107(01)00996-5
Publikováno v:
Journal of Alloys and Compounds. 328:199-205
The strain ratio ec/ea versus crystallographic orientation is measured for 25–80-nm thick MOCVD ternary layers of Ga1−xInxN deposited on 3-μm thick buffer layer of GaN grown on the c-plane of sapphire. High resolution X-ray maps and diffraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::472270b1659814a0ef6f24ad0ddbfd89
https://doi.org/10.1016/s0925-8388(01)01294-4
https://doi.org/10.1016/s0925-8388(01)01294-4
Autor:
E. Zielińska-Rohozińska, T. Slupinski
Publikováno v:
Thin Solid Films. 367:227-231
In this paper we briefly show the results of joined studies of the free electron concentration and X-ray diffuse scattering (detected by HR XRD - reciprocal space maps) as a function of Te atoms concentration in GaAs and controlled annealing of sampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0c892afd403c7a816384c1ac9386f38
https://doi.org/10.1016/s0040-6090(00)00695-7
https://doi.org/10.1016/s0040-6090(00)00695-7
Publikováno v:
Journal of Physics D: Applied Physics. 31:1883-1887
Diffuse scattering of x-rays is applied to studies of microdefects in annealed highly doped crystals of GaAs:Te. X-ray diffraction reciprocal space mapping was performed by high-resolution x-ray diffractometry in the triple-axis mode. The most charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b3acfdc3164f4262f923187f217efd4
https://doi.org/10.1088/0022-3727/31/15/017
https://doi.org/10.1088/0022-3727/31/15/017
Autor:
E. Zielińska-Rohozińska, T. Slupinski
Publikováno v:
Acta Physica Polonica A. 92:971-975
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71962a21af6d364ed4e67db34cbe1c13
https://doi.org/10.12693/aphyspola.92.971
https://doi.org/10.12693/aphyspola.92.971
Publikováno v:
Scopus-Elsevier
The aim of the present work was to correlate the electric characteristics of Te-doped gallium arsenide grown by LEC technique with the defect contents of the samples. Measurements for GaAs samples, doped with Si, Ge and Ge+Te as well as undoped ones,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25b59c962e9c5dfb86efd42c0116698c
https://doi.org/10.1007/bf03041025
https://doi.org/10.1007/bf03041025
Publikováno v:
Acta Physica Polonica A. 90:1080-1084
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e545b634f776a3a98d4c998d18940972
https://doi.org/10.12693/aphyspola.90.1080
https://doi.org/10.12693/aphyspola.90.1080