Zobrazeno 1 - 10
of 58
pro vyhledávání: '"E. Wiebicke"'
Publikováno v:
Journal of Solid State Chemistry. 179:2271-2280
We explore wet and dry etching processes of thin MnAs layers grown on GaAs(0 0 1) substrates for microstructuring. Most of the common wet chemical etch solutions for GaAs react with MnAs strongly and in a peculiar manner. Unidirectional cracks are ge
Autor:
William Ted Masselink, E. Wiebicke, Julia Dobbert, H. Kissel, H. Kostial, G.G. Tarasov, Uwe Müller, Y.I. Mazur, R. Pomraenke, Vasyl P. Kunets
Publikováno v:
IEEE Sensors Journal. 5:883-888
The noise spectrum in micro-Hall devices based on pseudomorphic Al/sub 0.2/Ga/sub 0.8/As/In/sub 0.1/Ga/sub 0.9/As/GaAs modulation-doped heterostructures was measured between 4 Hz and 65 kHz, allowing components due to thermal, 1/f, and generation-rec
Autor:
Yukihiko Takagaki, M. Ramsteiner, E. Wiebicke, Rudolf Hey, A. Riedel, H. Kostial, K. H. Ploog
Publikováno v:
Semiconductor Science and Technology. 18:807-811
We utilize imprint lithography and the epitaxial lift-off technique to fabricate devices in which the photoluminescence (PL) is modulated under irradiation of surface acoustic waves (SAWs). Imprint lithography provides short-wavelength SAW transducer
Publikováno v:
Applied Physics A: Materials Science & Processing. 76:837-840
Micrometer-size crystals are observed to grow spontaneously on chemically etched MnAs surfaces. The wet chemical etching leaves a nearly exclusive pile of amorphous arsenic on the surface when the MnAs layer is etched incompletely. Using Raman spectr
Publikováno v:
Semiconductor Science and Technology. 17:1008-1012
The dispersion of the Rayleigh wave in a strain-unrelaxed GaAs/AlAs/GaAs heterostructure is evaluated. We determine the wavelengths at which the velocity of surface acoustic waves (SAWs) is maximum or comparable to that in GaAs. The information is ut
Publikováno v:
Microelectronic Engineering. 63:205-209
We investigate the variation of the quenching of photoluminescence (PL) by surface acoustic waves (SAWs) when the depth profile of the SAW-induced electric fields is altered. The PL transition from the conduction band to acceptor states is restricted
Suppression of the photoluminescence quenching due to surface acoustic waves in high magnetic fields
Publikováno v:
Semiconductor Science and Technology. 17:161-165
The quenching of photoluminescence of GaAs by surface acoustic waves (SAWs) is investigated in the presence of a magnetic field. The response of the luminescence to the SAWs is weakened in high magnetic fields. The suppression of the quenching is att
Publikováno v:
Semiconductor Science and Technology. 16:L40-L43
We investigate the impact of two-step molecular beam epitaxy on the performance of GRINSCH lasers with In0.22Ga0.78As and GaAs quantum wells (QWs) in the active region. The buried regrown interface lies in the Al-containing optical waveguide section.
Influence of the second subband on the surface acoustic wave transmission in the quantum Hall regime
Publikováno v:
Semiconductor Science and Technology. 16:144-150
The attenuation of surface acoustic waves (SAWs) propagating through an asymmetric two-layer system is investigated in the quantum Hall regime. The position of the Fermi level is varied in the vicinity of the population threshold of the second subban
Publikováno v:
Journal of Crystal Growth. :582-585
Surface cleaning procedures including atomic hydrogen-assisted oxide desorption, ozone stripping and reevaporation for overgrowth on GaAs and Al x Ga 1− x As are studied by secondary ion mass spectrometry, capacitance/voltage profiling and atomic f