Zobrazeno 1 - 10
of 31
pro vyhledávání: '"E. W. Maby"'
Publikováno v:
IEEE Transactions on Electron Devices. 44:1837-1842
The metal semiconductor field effect transistor (MESFET) represents a more realistic test for "passivation" efficacy than conventional capacitor test structures due to its prototypical fabrication process. This paper evaluates Gallium-Arsenide (GaAs)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8b9b5f8a71363612a674f220fb9de3b
https://doi.org/10.1109/16.641350
https://doi.org/10.1109/16.641350
Autor:
G. W. Charache, E. W. Maby
Publikováno v:
Journal of Applied Physics. 78:3488-3491
A new metal‐semiconductor field‐effect‐transistor surface characterization technique is presented. The complex impedance (magnitude and phase) between the source and drain contacts is measured as a function of frequency and temperature. It is s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2806748e0c2e1d41ccf4c6d41ce3b5c2
https://doi.org/10.1063/1.359981
https://doi.org/10.1063/1.359981
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest.
A microwave monolithic technology based on zone-melt recrystallization (ZMR) of silicon films on alumina substrates using a phosphosilicate glass (PSG) buffer layer is described. While initial recrystallization results confirm the difficulty of obtai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a86bcf6628e86add506e934e53266b3
https://doi.org/10.1109/mwsym.1989.38884
https://doi.org/10.1109/mwsym.1989.38884
Publikováno v:
Journal of The Electrochemical Society. 140:1144-1146
In some metal oxide semiconductor (MOS) processes, sodium contamination may occur during the formation of source/drain contact windows or during subsequent metallization. Once introduced, the sodium diffuses laterally at different rates along several
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82b85831321c42cdae3a4894d70676e6
https://doi.org/10.1149/1.2056213
https://doi.org/10.1149/1.2056213
Publikováno v:
Journal of Applied Physics. 70:514-516
Specific contact resistivities of nonalloyed Si delta‐doped contacts to n‐GaAs have been measured using six‐terminal Kelvin test structures. The results indicate that multiple near‐surface delta layers are needed to obtain ohmic contacts with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c3f2d9fdbb92f5e573fc4434c185819
https://doi.org/10.1063/1.350264
https://doi.org/10.1063/1.350264
Publikováno v:
SPIE Proceedings.
The development of a micromachined accelerometer with high frequency response in described. The accelerometer is based on a thin film layer of polysilicon suspended over a field- effect transistor (FET), forming a moveable-gate transistor. The field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c3f999d85bf5232d25e80192e7beccd
https://doi.org/10.1117/12.284530
https://doi.org/10.1117/12.284530
Publikováno v:
MRS Proceedings. 239
Raman spectroscopy has been utilized to measure room-temperature residual strain in the active device layer of laser-recrystallized silicon-on-insulator (SOI) composite structures. The SOI composite structures were fabricated on synthetic fused-silic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::016cd826451c4650703df76b08689c3e
https://doi.org/10.1557/proc-239-201
https://doi.org/10.1557/proc-239-201
Autor:
Jonathan S. Abel, H. Mazurek, Gene Dresselhaus, Mildred S. Dresselhaus, David R. Day, E. W. Maby, Stephen D. Senturia
Publikováno v:
Journal of Polymer Science: Polymer Physics Edition. 21:537-551
Ion implantation of impurities into thin films of poly(p-phenylene sulfide) (PPS) is found to increase the conductivity of the material by up to 12 orders of magnitude. The increase is stable under exposure to ambient conditions, in contrast to the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c61d5c9fc55add671c99eb66e4d000a
https://doi.org/10.1002/pol.1983.180210405
https://doi.org/10.1002/pol.1983.180210405
Publikováno v:
Physical Review B. 24:1027-1034
Ion-implanted graphite is studied by Raman scattering. Highly oriented pyrolytic graphite is implanted with $^{7}\mathrm{Li}$, $^{9}\mathrm{Be}$, $^{11}\mathrm{B}$, $^{12}\mathrm{C}$, $^{31}\mathrm{P}$, and $^{75}\mathrm{As}$ ions at 100 keV normally
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6600328e7b4c4185524eb237e161d47
https://doi.org/10.1103/physrevb.24.1027
https://doi.org/10.1103/physrevb.24.1027
Publikováno v:
Solid-State Electronics. 31:1397-1400
Surface-oriented lateral mesa PIN diodes have been fabricated for the purpose of evaluating the feasibility of a silicon-on-insulator technology for microwave applications. For these devices, heavily doped p and n regions are formed from ion-implante
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::792a61a10f60b01b6f19b4e18c0898c7
https://doi.org/10.1016/0038-1101(88)90104-9
https://doi.org/10.1016/0038-1101(88)90104-9