Zobrazeno 1 - 10
of 89
pro vyhledávání: '"E. Veuhoff"'
Publikováno v:
Journal of Crystal Growth. 195:660-667
For industrial device fabrication gaseous dopant sources are preferred in metalorganic growth technologies. Both in metalorganic vapor phase epitaxy (MOVPE) and metalorganic molecular beam epitaxy (MOMBE/CBE) diethylzinc is used. For doping of InP ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c08561c232b7924d82c1cc5083fb5089
https://doi.org/10.1016/s0022-0248(98)00642-3
https://doi.org/10.1016/s0022-0248(98)00642-3
Exploitation of surface selective growth in metalorganic growth technologies for device applications
Autor:
E. Veuhoff
Publikováno v:
Journal of Crystal Growth. 195:444-458
Surface selective growth (SSG) is gaining importance for the realization of complex device concepts. This review article addresses basic SSG mechanisms both in metalorganic vapor phase epitaxy (MOVPE) and in metalorganic molecular beam epitaxy (MOMBE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b852efd07416cfd4432ecd880ae9fd29
https://doi.org/10.1016/s0022-0248(98)00641-1
https://doi.org/10.1016/s0022-0248(98)00641-1
Autor:
E. Veuhoff
Publikováno v:
Journal of Crystal Growth. 188:231-246
Metalorganic molecular beam epitaxy (MOMBE/CBE), which has initially been introduced as a method for fundamental research, has become a growth technology for high quality device structures. The potential of this new technology as an industrial tool f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84b4ab249c82bfb7f6a15a6f15fc8e16
https://doi.org/10.1016/s0022-0248(98)00046-3
https://doi.org/10.1016/s0022-0248(98)00046-3
Dopant incorporation behaviour during MOMBE growth of InP on (1 0 0), {1 1 1} and nonplanar surfaces
Publikováno v:
Journal of Crystal Growth. 188:183-190
The doping of InP using Si and Zn has been studied for MOMBE growth on (1 0 0), (1 1 1)A, (1 1 1)B and for the overgrowth of nonplanar surfaces. The investigation of large area growth shows that Si acts as a donor on the three investigated surfaces.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e86373ca25a5d4166030095124b6c5c
https://doi.org/10.1016/s0022-0248(98)00095-5
https://doi.org/10.1016/s0022-0248(98)00095-5
Publikováno v:
Journal of Crystal Growth. 188:266-274
For applications in long wavelength MQW lasers, GaInAsP/InP heterostructures were grown by metalorganic molecular beam epitaxy (MOMBE or CBE). The growth process was performed with all gaseous sources for group III, group V and dopant precursors. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::259dcc906c277cd47e9637b6113ef331
https://doi.org/10.1016/s0022-0248(98)00065-7
https://doi.org/10.1016/s0022-0248(98)00065-7
Publikováno v:
Journal of Crystal Growth. 188:247-254
In this study we investigated the material incorporation efficiencies in GaInAsP and InAsP layers grown on InP substrates for large area metalorganic molecular-beam epitaxy (MOMBE). We found an optimum growth temperature for the quaternary material (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0770268fa00111f2e279e3aa5ccd7cb2
https://doi.org/10.1016/s0022-0248(98)00052-9
https://doi.org/10.1016/s0022-0248(98)00052-9
Publikováno v:
Journal of Crystal Growth. :1247-1253
The feasibility of metalorganic molecular beam epitaxy (MOMBE or CBE) as a production process is studied with respect to flexibility, uniformity, long term stability and device quality. Gaseous doping sources were used for growth of GaInAsP/InP devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8a1c0b4f245daf33357d77e2efadd2b
https://doi.org/10.1016/s0022-0248(96)00945-1
https://doi.org/10.1016/s0022-0248(96)00945-1
Publikováno v:
Journal of Crystal Growth. 170:161-166
In a comparative study we have chosen TBAs and TBP as well as AsH 3 and PH 3 for the growth of InP/GaInAs(P) heterostructures for laser applications in a production metalorganic molecular beam epitaxy (MOMBE) system. The n-type doping was performed w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04378161cbd640f319cb4f12cec13ee9
https://doi.org/10.1016/s0022-0248(96)00627-6
https://doi.org/10.1016/s0022-0248(96)00627-6
Publikováno v:
Journal of Crystal Growth. 164:402-408
Diethylzinc was used as a gaseous p-type dopant source for growth of InP/GaInAsP layers in metalorganic molecular beam epitaxy. In InP layers a significant effect of growth temperature on Zn incorporation and on electrical activation has been found.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cafcec40ab4adaa1d2b504e821fc3d92
https://doi.org/10.1016/0022-0248(96)00016-4
https://doi.org/10.1016/0022-0248(96)00016-4
Autor:
E. Veuhoff, H. Heinecke
Publikováno v:
Materials Science and Engineering: B. 21:120-129
In this review, the capabilities of molecular beam epitaxy (MBE), metalorganic vapour phase epitaxy (MOVPE) and metalorganic molecular beam epitaxy (MOMBE) or chemical beam epitaxy (CBE) for the growth of optoelectronic layered structures are evaluat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3bef1aa56edac30d49420a4083eaa2b
https://doi.org/10.1016/0921-5107(93)90334-j
https://doi.org/10.1016/0921-5107(93)90334-j