Zobrazeno 1 - 10
of 21
pro vyhledávání: '"E. Verret"'
Publikováno v:
eXPRESS Polymer Letters, Vol 14, Iss 7, Pp 606-618 (2020)
Flame retardancy and mechanical performance of multi-layered biocomposites, consisting of polylactic acid (PLA) matrix films and plain-woven flax fabrics as reinforcement, were investigated. Full factorial design (32) was applied to evaluate the effe
Externí odkaz:
https://doaj.org/article/53a2fe028f764fb09071cddcce4141a6
Akademický článek
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Autor:
E. Verret, Beáta Szolnoki, György Marosi, Attila Farkas, Dániel Vadas, Katalin Bocz, Kata Enikő Decsov
Publikováno v:
eXPRESS Polymer Letters, Vol 14, Iss 7, Pp 606-618 (2020)
Flame retardancy and mechanical performance of multi-layered biocomposites, consisting of polylactic acid (PLA) matrix films and plain-woven flax fabrics as reinforcement, were investigated. Full factorial design (32) was applied to evaluate the effe
Autor:
W.J. Taylor, D. Tekleab, K. Loiko, B. Winstead, Srikanth B. Samavedam, M. Foisy, C. Capasso, E. Verret
Publikováno v:
IEEE Electron Device Letters. 28:719-721
Thin SiGe-channel confinement is found to provide significant control of the short channel effects typically associated with nonbandedge gate electrodes, in an analogous manner to ultrathin-body approaches. Gate workfunction requirements for thin-SiG
Autor:
D. Roan, Byoung W. Min, A. Haggag, David Burnett, James K. Schaeffer, M. Raymond, Konstantin V. Loiko, Brian A. Winstead, E. Verret, Rama I. Hegde, C. Capasso, Ana Olivia Ruíz Martínez, N. Cave, J. Smith, Philip J. Tobin, M. Foisy, E. Luckowski, J.-Y. Nguyen, S. Venkatesan, D. Jovanovic, C. Happ, L. Hebert, S. Kalpat, W.J. Taylor, L.B. La, Dina H. Triyoso, S. Samavedam, S.B. White, David C. Gilmer
Publikováno v:
2006 International Electron Devices Meeting.
We present a low cost, single metal gate/high-k gate stack integration, which provides a very high performing NMOS coupled with a counter-doped PMOS for a 45nm low power (LP) CMOS technology. Inversion Tox (Tinv) values of 16Aring/18Aring (NMOS/PMOS)
Autor:
W.J. Taylor, E. Verret
Publikováno v:
2006 International Workshop on Junction Technology.
As processes are being defined and transistor architectures are being selected for the 45nm node, the International Technology Roadmap for Semiconductors (ITRS) [1] provides a worthwhile reference for comparing options. In this paper, we discuss thos
Publikováno v:
Physical Review B. 71
We investigate the use of the complex band structure of high-$k$ gate dielectrics to estimate their charge neutrality levels, and compute band offsets to Si. A comparison is made with the available results obtained with direct electronic structure me
Autor:
M. Raymond, E. Verret, E. Luckowski, Ana Olivia Ruíz Martínez, Le Boi La, C. Happ, J. Schaeffer, Philip J. Tobin, C. Capasso, Jen-Yee Nguyen, William J. Taylor
Publikováno v:
The Fourth International Workshop on Junction Technology, 2004. IWJT '04..
It is well accepted that one of the key parasitic resistances in ULSI transistors is the contact resistance between the silicide and the doped source/drain. In this paper, we investigate the individual components of this parameter. We show that the c
Publikováno v:
The CLAO journal : official publication of the Contact Lens Association of Ophthalmologists, Inc. 27(1)
Increasing evidence suggesting deleterious effects of ultraviolet radiation (UVR) on the eye has prompted manufacturers to develop UV-absorbing disposable contact lenses. The spectral transmittances of a sample of these lenses were measured in order
Akademický článek
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