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Autor:
O. F. Vyvenko, I. Ya. Gerlovin, A. A. Sitnikova, Yu. P. Efimov, D. K. Loginov, E. V. Ubyĭvovk, Yu. K. Dolgikh, Demid A. Kirilenko, V. V. Petrov, S. A. Eliseev
Publikováno v:
Physics of the Solid State. 51:1929-1934
The thickness of the GaAs “dead layer” in the GaAs/AlGaAs heterostructure has been directly measured. The widths of the dead layer obtained in the experiment are compared with the values for the same material interfacing with the external medium