Zobrazeno 1 - 5
of 5
pro vyhledávání: '"E. V. Shitova"'
Publikováno v:
Physica Status Solidi (a). 29:303-307
A method for the calculation of vacancy concentrations, induced by ion implantation, is presented which is based on the change of the parameters in the curve of radial distribution of the atomic density (CRD) after irradiation. It is shown that the l
Publikováno v:
Physica Status Solidi (a). 36:81-88
The structure of surface silicon layers heavily irradiated with nitrogen ions depending on dose and subsequent annealing temperature is investigated by transmission electron microscopy. It is shown that in the absence of annealing the produced Si3N4
Publikováno v:
Chemischer Informationsdienst. 6
Publikováno v:
Chemischer Informationsdienst. 6
Publikováno v:
Chemischer Informationsdienst. 6