Zobrazeno 1 - 10
of 19
pro vyhledávání: '"E. V. Russu"'
Autor:
A. V. Bobyl, Alexander Belyaev, I. S. Tarasov, A. B. Kamalov, V. N. Ivanov, Ya. Ya. Kudryk, I. N. Arsentyev, O. S. Lytvyn, N. S. Boltovets, E. V. Russu, R. V. Konakova, V. V. Milenin
Publikováno v:
Semiconductors. 42:777-782
Structural and electrical properties of Au-TiBx-nn+n++-InP and TiBx-nn+n++-InP multilayer barrier structures on standard (“rigid”) and soft (“porous”)n++-InP substrates have been studied, with the semiconductor layers deposited by vapor-phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e347096a4dab43600499e3f911b365ee
https://doi.org/10.1134/s1063782608070051
https://doi.org/10.1134/s1063782608070051
Publikováno v:
Semiconductors. 38:1198-1201
I-V characteristics, spectral photosensitivity, and the dependence of the photocurrent on bias, as well as the effect of a 1%-H2S/N2 gas mixture, were studied for an Al-p-Si-SnO2:Cu-Ag heterostructure. The charge transport for carriers in the dark an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::511521f314dae3ea534497ed03c5babe
https://doi.org/10.1134/1.1808828
https://doi.org/10.1134/1.1808828
Publikováno v:
Semiconductors. 36:476-479
Electrical and photoelectric characteristics of Pd-p-InP diode structures were studied after their storage in air for many years. An increase in the Schottky barrier height by 0.2–0.3 eV and a rise in photosensitivity were revealed. The current tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f872da2fb98baa9ac1430a44448d7b63
https://doi.org/10.1134/1.1469199
https://doi.org/10.1134/1.1469199
Publikováno v:
Semiconductors. 35:464-467
The mechanism of charge transport in an anisotype p-Si-n+-ZnO-n-ZnO-Pd heterostructure with Schottky contact was studied. Photoelectric characteristics of this heterostructure were analyzed. The observed dependence I ∝ V3 is attributed to the doubl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f5ff5067bdbee2afe18665e877ced41
https://doi.org/10.1134/1.1365196
https://doi.org/10.1134/1.1365196
Publikováno v:
Semiconductors. 34:1224-1228
Current-voltage characteristics at T=100 and 300 K, the temperature dependence of the forward current and photocurrent, the influence of a magnetic field on the photocurrent, and the influence of hydrogen on the photovoltage and dark current were inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50c87d52e7326a0785e2a6f7ff6e549c
https://doi.org/10.1134/1.1317588
https://doi.org/10.1134/1.1317588
Publikováno v:
Semiconductors. 31:11-14
The electrical characteristics and the photovoltage on Pd-p 0-Si-p-Si diode structures with a disordered (porous) p 0 layer of Si have been measured. The current-transfer mechanism is assumed to be double injection of electrons and holes into the p 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75e4b18bf289af0d5bf6bd12bea9d25e
https://doi.org/10.1134/1.1187325
https://doi.org/10.1134/1.1187325
Publikováno v:
Semiconductors. 38:1381-1383
Electrical and photoelectric properties of Al-n-Si-SnO2:Cu-Ag heterostructures are studied. It is established that the charge transport in this structure is caused by double injection of charge carriers in the diffusion approximation. A 35% increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5866fc712bcf76aad3d94a5d844245eb
https://doi.org/10.1134/1.1836056
https://doi.org/10.1134/1.1836056
Publikováno v:
Technical Physics Letters. 26:628-630
The mechanisms of charge transfer in n+-CdS-p-InP-p+-InP heterostructures were studied in the temperature interval from 100 to 300 K. The forward current is determined either by tunneling via local centers (at low temperatures) or by recombination in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ff44f993c465422b9c67c9d0e3819d9
https://doi.org/10.1134/1.1262935
https://doi.org/10.1134/1.1262935
Publikováno v:
Semiconductors. 32:960-962
Mechanisms are investigated for current transport in porous p-Si and Pd-p-por-Si structures in the temperature range 78–300 K. It is shown that at 78 K drift transport is decisive, with the participation of deep traps with a concentration Nt≈1.3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d18c6cebd7aaf9503752eb77ffbbaec4
https://doi.org/10.1134/1.1187524
https://doi.org/10.1134/1.1187524
Publikováno v:
Semiconductors. 33:421-422
Current-voltage and capacitance-voltage characteristics and the transverse and longitudinal photoelectric effects are measured for n-ZnO-n-Si heterostructures obtained by deposition from organometallic compounds. Some parameters of the interface, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4b14deca978bd12bfd833c290dbbda0
https://doi.org/10.1134/1.1187886
https://doi.org/10.1134/1.1187886