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pro vyhledávání: '"E. V. Ranneva"'
Autor:
A. V. Ulanova, E. V. Ranneva, V. D. Kalashnikov, M. E. Chernyak, A. M. Tsyrlov, V. S. Fedosov, A. N. Shchepanov, D. O. Titovets, A. Yu. Nikiforov, A. I. Verizhnikov
Publikováno v:
Russian Microelectronics. 48:415-421
This paper is devoted to analyzing the effect of gamma radiation on the behavior of optocouplers. According to a series of experiments that involve masking various parts of a chip from X-ray irradiation, the most sensitive region of the chip is deter