Zobrazeno 1 - 9
of 9
pro vyhledávání: '"E. V. Ostroumova"'
Autor:
Andrey N. Aleshin, E. V. Ostroumova
Publikováno v:
Technical Physics Letters. 45:1212-1215
Current–voltage characteristics of composite field-effect transistors with active layers based on inorganic perovskites, nanocrystals of cesium halides CsPbBr3, embedded into the matrix of a semiconductor polymer PFO (PFO:CsPbBr3) have been analyze
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::392cf80def26016581cb977a1cf238dc
https://doi.org/10.1134/s1063785019120101
https://doi.org/10.1134/s1063785019120101
Publikováno v:
Technical Physics Letters. 41:153-156
Dynamic processes establishing of the collector current and also the rate of inversion base forming for tunnel MIS-structure transistors were investigated in Al-SiO2-n-Si heterostructures having a tunnelthin insulator layer and an advanced emitter wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a09e6f9f340a98445ebd42499b7894bb
https://doi.org/10.1134/s1063785015020030
https://doi.org/10.1134/s1063785015020030
Autor:
E. V. Ostroumova, A. A. Rogachev
Publikováno v:
Semiconductors. 33:1027-1029
In an Auger transistor formed from an Al-SiO2-n-Si heterojunction with a tunneling-thin oxide layer we have investigated high-frequency instabilities of S-and N-type in the collector current which arise during tunneling injection of hot electrons fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0651921be8fca646906528efb6998940
https://doi.org/10.1134/1.1187832
https://doi.org/10.1134/1.1187832
Publikováno v:
Technical Physics Letters. 41:409-409
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8840bf1b6ddad4879bc142099f5d2022
https://doi.org/10.1134/s106378501504032x
https://doi.org/10.1134/s106378501504032x
Studies of the effects of radiation on reproductive function in large populations have revealed uncertain and sometimes contradictory results. Radiation from nuclear weapons has been implicated in transient amenorrhea, earlier menopause, and altered
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02ab9d659de0cb76928f9c7776f2c573
https://doi.org/10.21236/ada469997
https://doi.org/10.21236/ada469997
Publikováno v:
SPIE Proceedings.
Conditions for appearance of a self-consistent quantum well in both the near-surface region of a vacuum semi-conductor field-emitter and a case of metal-insulator-semiconductor heterostructures (Auger-transistor) under strong electric field have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b75fbe37264bb3ec685782685885a5e2
https://doi.org/10.1117/12.514261
https://doi.org/10.1117/12.514261
Autor:
A. A. Rogachev, E. V. Ostroumova
Publikováno v:
Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices ISBN: 9780792350088
The paper is devoted to the investigation of current instabilities in the Al-Si0 2 - n-Si Auger, transistor. We succeeded for the first time in creating of the Auger transistor, in which in particular we used a metal-insulator heterojunction instead
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86280486d728008ec2377ae2af4f7f58
https://doi.org/10.1007/978-94-011-5008-8_28
https://doi.org/10.1007/978-94-011-5008-8_28
Autor:
V. I. Perel, V. I. Korolkov, N. I. Sablina, P. D. Altukhov, V. S. Bagaev, V. V. Afrosimov, V. I. Stepanov, Zh. I. Alferov, G. V. Mikhailov, Nikolai N. Sibeldin, B. A. Volkov, V. A. Zayats, P. S. Kop’ev, M. P. Petrov, E. P. Mazets, Boris P Zakharchenya, Ya. E. Pokrovskii, R. V. Parfen’ev, D. A. Varshalovich, I. V. Grekhov, E. V. Ostroumova, Yu. V. Kopaev, A. G. Zabrodskii, Vladislav B. Timofeev, Robert A. Suris
Publikováno v:
Semiconductors. 34:493-494
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d593496c6192ee6c835cc1cde850f59c
https://doi.org/10.1134/1.1188013
https://doi.org/10.1134/1.1188013
Autor:
E. V. Ostroumova
Publikováno v:
Physics of p-n Junctions and Semiconductor Devices ISBN: 9781475712346
A brief report is given of the results of an experimental investigation of the dependence of the breakdown voltage (Ubr) of silicon p-n junctions on the surface potential (Ψs). It was established that depletion of the majority carriers in the surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9df1b65ac5eb94fd2a9c8294bc5321c
https://doi.org/10.1007/978-1-4757-1232-2_29
https://doi.org/10.1007/978-1-4757-1232-2_29