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Autor:
V.A. Osin, V. N. Kartaev, V. G. Muskatn’ev, A. G. Arzev, V. V. Eliseev, A. V. Grishanin, V. V. Sviridov, E. V. Kozhenkov, I. V. Galakhov, V. A. Martynenko, O. V. Frolov, D. A. Naumov, D. Yu. Nemaev, L. S. Ganin, A. A. Khapugin, A. V. Krekov
Publikováno v:
Instruments and Experimental Techniques. 64:529-538
The results of the development and the main characteristics of a new generation of semiconductor current switches (250 kA/25 kV/70 C) based on assemblies of series-connected reverse switched-on dynistors (RSDs) are presented. The methods for increasi