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pro vyhledávání: '"E. V. Grekov"'
Autor:
E. V. Grekov
Publikováno v:
Physica Status Solidi (a). 143:157-167
A theoretical analysis of static characteristics of amorphous hydrogenated silicon (a-Si: H) field-effect transistors is carried out. The following distribution of the density of localized states (DLS) is assumed: in the conduction band-tail region D
Autor:
E. V. Grekov, O. G. Sukhorukov
Publikováno v:
physica status solidi (b). 165:219-228
Analyse theorique du courant limite par la charge d'espace de l'etat stable, aux champs electriques eleves, dans un isolant ou un semiconducteur a resistance elevee possedant des pieges. Consideration de l'emission des porteurs de Poole-Frenkel a par
Publikováno v:
Онкогематология, Vol 15, Iss 3, Pp 63-66 (2020)
Peripheral T-cell lymphoma, not otherwise specified (PTCL-NOS) have an aggressive, life-threatening course. 5‑year survival rate is less than 20 %, which may be due to not timely diagnosis. PTCL-NOS can histologically and immunophenotypically mimic
Externí odkaz:
https://doaj.org/article/ea4de0f735864eeda312e28af25355dd
Autor:
V. G. Baru, E. V. Grekov
Publikováno v:
physica status solidi (b). 105:369-376
A “liquid—gas” phase transition is investigated in a quasi-two-dimensional (quasi-2D) electron gas in magnetic semiconductors. The quasi-2D gas is produced by an external electric field in a metal—insulator—semiconductor system. The transit