Zobrazeno 1 - 1
of 1
pro vyhledávání: '"E. V. Gerova"'
Publikováno v:
Physica Status Solidi (a). 48:609-614
SiO2 layers on Si substrates are obtained in planar reactor by decomposition of tetra-ethoxy silane in oxygen plasma. The layers deposited at substrate temperature of 300 °C show some porosity, hygroscopicity, increased etching rate, and water incor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5331799f476c7915c82f9c22a6ef4da
https://doi.org/10.1002/pssa.2210480243
https://doi.org/10.1002/pssa.2210480243
