Zobrazeno 1 - 10
of 16
pro vyhledávání: '"E. V. Gerova"'
Publikováno v:
Physica Status Solidi (a). 48:609-614
SiO2 layers on Si substrates are obtained in planar reactor by decomposition of tetra-ethoxy silane in oxygen plasma. The layers deposited at substrate temperature of 300 °C show some porosity, hygroscopicity, increased etching rate, and water incor
Autor:
Gommé, Guillaume, Cutivet, Adrien, Bouzazi, Boussairi, Boucherif, Abderrahim Rahim, MacElwee, Tom, Rodriguez, Christophe, Bouchilaoun, Meriem, Pelletier, Hubert, Provost, Philippe-Olivier, Maher, Hassan, Ares, Richard
Publikováno v:
AIP Advances; Jun2020, Vol. 10 Issue 6, p1-5, 5p
Autor:
Yao, Li‐Ren1, Lu, Fu‐Hsing1
Publikováno v:
International Journal of Applied Ceramic Technology. Jan2013, Vol. 10 Issue 1, p51-59. 9p.
Autor:
Fathimulla, Ayub, Lakhani, Amir A.
Publikováno v:
Journal of Applied Physics; Aug1983, Vol. 54 Issue 8, p4586-4589, 4p
Autor:
Altuntas, Halit, Bayrak, Turkan
Publikováno v:
Electronic Materials Letters; Mar2017, Vol. 13 Issue 2, p114-119, 6p
Publikováno v:
MRS Online Proceedings Library; 2003, Vol. 783 Issue 1, p1-6, 6p
Autor:
Phahle, A. M.
Publikováno v:
Digest of Literature on Dielectrics, Volume 42, 1978; 1978, p351-406, 56p
Publikováno v:
Microchimica Acta; Aug1999, Vol. 131 Issue 3/4, p211-218, 8p
Autor:
Senkevich, Jay J., Leber, Donald E., Tutor, Michael J., Heiks, Noel A., Ten Eyck, Greg A., Scherrer, David W.
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1999, Vol. 17 Issue 5, p2129-2135, 7p
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1992, Vol. 10 Issue 3, p1139-1150, 12p