Zobrazeno 1 - 10
of 30
pro vyhledávání: '"E. V. Erofeev"'
Publikováno v:
IZVESTIYA SFedU. ENGINEERING SCIENCES. :41-51
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::421d32bd91f2eaf8aa9371335aeee0b0
https://doi.org/10.18522/2311-3103-2021-7-41-51
https://doi.org/10.18522/2311-3103-2021-7-41-51
Low-Temperature Ta/Al-Based Ohmic Contacts to AlGaN/GaN Heteroepitaxial Structures on Silicon Wafers
Publikováno v:
Semiconductors. 53:237-240
The formation features of a low-temperature Ta/Al-based ohmic contact to Al0.25Ga0.75N/GaN heteroepitaxial structures on silicon substrates are studied. The fabricated ohmic contacts based on Ta/Al/Ti (10/300/20 nm) compositions have a low contact re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cd77177f31ad7cb21acc0ebc106549b
https://doi.org/10.1134/s1063782619020064
https://doi.org/10.1134/s1063782619020064
Publikováno v:
Semiconductors. 51:1229-1232
Transistors with a high electron mobility based on AlGaN/GaN epitaxial heterostructures are promising component types for creating high-power electronic devices of the next generation. This is due both to a high charge-carrier mobility in the transis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e627aad4f0c19862b70c97b8a7a60f75
https://doi.org/10.1134/s106378261709010x
https://doi.org/10.1134/s106378261709010x
Publikováno v:
Russian Microelectronics. 46:205-210
The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e424149061226ab8973849e8905438b
https://doi.org/10.1134/s1063739717020020
https://doi.org/10.1134/s1063739717020020
Publikováno v:
Semiconductors. 51:245-248
High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c7c8e75234d42aabdd07efa46675ae5
https://doi.org/10.1134/s1063782617020063
https://doi.org/10.1134/s1063782617020063
Publikováno v:
Technical Physics Letters. 44:260-262
Field dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor–acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d129e98400717cebfbf57c5600b6d707
https://doi.org/10.1134/s1063785018030240
https://doi.org/10.1134/s1063785018030240
Publikováno v:
Semiconductors. 50:1236-1240
The systematic features of the formation of the low-resistivity compound Cu3Ge by low-temperature treatment of a Cu/Ge two-layer system in an atomic hydrogen flux are studied. The Cu/Ge two-layer system is deposited onto an i-GaAs substrate. Treatmen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cac51241f12fe6211c2c7bea26f6f937
https://doi.org/10.1134/s1063782616090086
https://doi.org/10.1134/s1063782616090086
Autor:
A S Alekseenkov, E V Erofeev
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 734:012016
The paper presents the results of mathematical modeling and experimental research of the dynamic characteristics of the prototype of aircraft hybrid electrohydraulic steering actuator with combined speed control. The mathematical modeling of dual-mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5024e60c85d24b5dc30de1195da5b70e
https://doi.org/10.1088/1757-899x/734/1/012016
https://doi.org/10.1088/1757-899x/734/1/012016
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 734:012015
The trend in aircraft systems development to overall electrification includes electrification of flight control actuation system. Generally, there’re two main technologies of «electrical» actuation, which use the power of on-board electrical syst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38ac2cebe598a405d25cf9332a813e80
https://doi.org/10.1088/1757-899x/734/1/012015
https://doi.org/10.1088/1757-899x/734/1/012015
Publikováno v:
Russian Microelectronics. 44:380-388
Design-processing solutions on the formation of microwave GaAs monolithic integrated circuits (MMICs) with copper-based metallization of the frontside are presented. As a metallization of ohmic and gate contacts of pHEMTs Pd/Ge/Al/Mo and Ti/Al/Mo mul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f0b2a40089c7a6072458534bedf3f46
https://doi.org/10.1134/s1063739715060049
https://doi.org/10.1134/s1063739715060049