Zobrazeno 1 - 5
of 5
pro vyhledávání: '"E. V. Begun"'
Autor:
Yu. V. Kryuchenko, E. V. Begun, D. V. Korbutyak, I. I. Geru, A. V. Sachenko, E. G. Manoilov, Olga M. Sreseli, E. B. Kaganovich
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 6:420-426
Photoelectric Properties of Heterostructures with Oxide Films Containing Si(Ge) Quantum Dots Formed by Pulsed Laser Deposition A. V. Sachenko1, D. V. Korbutyak1, Yu. V. Kryuchenko1 ∗, E. B. Kaganovich1, E. G. Manoilov1, E. V. Begun1, O. M. Sreseli2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dbd650272e444d80b5d0b8b0a0da13c
https://doi.org/10.1166/jno.2011.1192
https://doi.org/10.1166/jno.2011.1192
Autor:
Yu. V. Kryuchenko, I. M. Kupchak, É. G. Manoĭlov, E. V. Begun, A. V. Sachenko, D. V. Korbutyak, E. B. Kaganovich
Publikováno v:
Semiconductors. 42:1194-1199
This paper deals with the theoretical and experimental study of radiative processes in zero-dimensional Si and Ge nanostructures consisting of a system of Si or Ge nanocrystals embedded in an Al2O3 matrix. The Al2O3 films containing Si or Ge quantum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73791d930e8186b9849bb6355f2c4130
https://doi.org/10.1134/s1063782608100096
https://doi.org/10.1134/s1063782608100096
Publikováno v:
Semiconductors. 42:545-549
The composition of photoluminescent films containing low-dimensional silicon and germanium is studied. Si, Ge, and Al oxide films containing Si and Ge quantum dots are produced by pulsed laser ablation. The infrared transmittance spectra in the range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2871f233d0dffdb1cc7479ea97617616
https://doi.org/10.1134/s1063782608050102
https://doi.org/10.1134/s1063782608050102
Autor:
E. V. Begun
Publikováno v:
Semiconductor physics, quantum electronics and optoelectronics. 10:46-50
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51621fc7b73d44edda2314dcb052e679
https://doi.org/10.15407/spqeo10.02.046
https://doi.org/10.15407/spqeo10.02.046
Publikováno v:
Semiconductors. 41:172-175
Time-resolved studies of photoluminescence in the energy range 1.4–3.2 eV are carried out for GeOx films (x ≤ 2) containing Ge nanoclusters. The relaxation times vary in the range from 50 ns to 20 μs. The films are produced by single-stage pulse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02e86b6039fb6fddf6e5d3dbfbe8f7c6
https://doi.org/10.1134/s106378260702011x
https://doi.org/10.1134/s106378260702011x