Zobrazeno 1 - 10
of 71
pro vyhledávání: '"E. Ungersboeck"'
Publikováno v:
Mathematics and Computers in Simulation. 79:1071-1077
The band structure of silicon (Si) under arbitrary stress/strain conditions is calculated using the empirical nonlocal pseudopotential method. The method is discussed with a special focus on the strain induced breaking of crystal symmetry. It is demo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7151f58e975a80d3cd4db0b530e34a23
https://doi.org/10.1016/j.matcom.2007.10.004
https://doi.org/10.1016/j.matcom.2007.10.004
Publikováno v:
Materials Science and Engineering: R: Reports. 58:228-270
Due to the rapid decrease in device dimensions the well-established TCAD tools are pushed to the limits of their applicability. Since conventional MOSFETs are already operating in the sub-100 nm range, new physical effects and principles begin to det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6debee151701b2028bdd4a9d725eb6d
https://doi.org/10.1016/j.mser.2007.11.001
https://doi.org/10.1016/j.mser.2007.11.001
Publikováno v:
IEEE Transactions on Electron Devices. 54:2183-2190
A model capturing the effect of general strain on the electron effective masses and band-edge energies of the lowest conduction band of silicon is developed. Analytical expressions for the effective mass change induced by shear strain and valley shif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7450577f8ed64c778de17805bc14ec0b
https://doi.org/10.1109/ted.2007.902880
https://doi.org/10.1109/ted.2007.902880
Publikováno v:
Solid-State Electronics. 51:299-305
Low field mobility in double- and single-gate structures is analyzed for (1 0 0) and (1 1 0) SOI substrate orientation. A Monte Carlo algorithm for vanishing driving fields allows the calculation of the mobility for arbitrary scattering rates and ban
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0ff0d2d1627fb1ac148818c457cc1ec
https://doi.org/10.1016/j.sse.2007.01.022
https://doi.org/10.1016/j.sse.2007.01.022
Publikováno v:
Journal of Computational Electronics. 6:55-58
The band structure of Silicon under arbitrary stress/strain conditions has been calculated using the empirical non-local pseudopotential method. It is shown that the change of the electron effective mass cannot be neglected for general stress conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::531607300273bdcfb770d62d89cc1d2e
https://doi.org/10.1007/s10825-006-0047-0
https://doi.org/10.1007/s10825-006-0047-0
Publikováno v:
ECS Transactions. 3:443-450
Full-band Monte Carlo simulations are performed to study the properties of hole transport in bulk Germanium under general strain conditions. The band structures are calculated with the empirical non-local pseudopotential method. For Monte Carlo simul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1163d20fbd3493c672137a63c3fe7fd7
https://doi.org/10.1149/1.2355842
https://doi.org/10.1149/1.2355842
Autor:
E. Ungersboeck, Hans Kosina
Publikováno v:
Journal of Computational Electronics. 5:79-83
The effect of degeneracy both on the phonon-limited mobility and the effective mobility including surface-roughness scattering in unstrained and biaxially tensile strained Si inversion layers is analyzed. We introduce a new method for the inclusion o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb29c10318095264e80b1a5c36beda92
https://doi.org/10.1007/s10825-006-8823-4
https://doi.org/10.1007/s10825-006-8823-4
Autor:
Mahdi Pourfath, E. Ungersboeck, Byoung-Ho Cheong, Siegfried Selberherr, Andreas Gehring, Wanjun Park, Hans Kosina
Publikováno v:
IEEE Transactions On Nanotechnology. 4:533-538
The performance of Schottky-barrier carbon-nanotube field-effect transistors (CNTFETs) critically depends on the device geometry. Asymmetric gate contacts, the drain and source contact thickness, and inhomogenous dielectrics above and below the nanot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4b646d91dcf7db7de94eb11658d1a48
https://doi.org/10.1109/tnano.2005.851402
https://doi.org/10.1109/tnano.2005.851402
Autor:
E. Ungersboeck, Siegfried Selberherr, Mahdi Pourfath, Hans Kosina, Andreas Gehring, Wan Jae Park, Byoung-Ho Cheong
Publikováno v:
Microelectronic Engineering. 81:428-433
Carbon nanotube field-effect transistors (CNTFETs) have been studied in recent years as a potential alternative to CMOS devices, because of the capability of ballistic transport. CNTFETs can be fabricated with Ohmic or Schottky type contacts. We focu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70ffc708d2da72f84362793794b73d99
https://doi.org/10.1016/j.mee.2005.03.043
https://doi.org/10.1016/j.mee.2005.03.043
Publikováno v:
Semiconductor Science and Technology. 19:S226-S228
The Wigner equation was used for the calculation of carrier transport in mesoscopic devices. The carrier transport has a coherent part determined by the Wigner potential Vw and a dissipative part accounting for the interaction with phonons. Models ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9feb0eaf8960c1af1ae577a301dd88f
https://doi.org/10.1088/0268-1242/19/4/076
https://doi.org/10.1088/0268-1242/19/4/076