Zobrazeno 1 - 10
of 12
pro vyhledávání: '"E. U. Arzikulov"'
Publikováno v:
Surface Engineering and Applied Electrochemistry. 49:308-311
There was found the autoquenching effect of photoconductivity (PC) in silicon with repeatedly charged nanoclusters of manganese atoms in the range of hν = 0.4–0.5 eV. The peculiarity of the observed phenomenon is quenching of PC at the absolute ab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4e74b4039aee7c7c0e95a77726d5df4
https://doi.org/10.3103/s1068375513040029
https://doi.org/10.3103/s1068375513040029
Publikováno v:
Surface Engineering and Applied Electrochemistry. 46:80-85
The differential cross section of Raman scattering in semiconductor size-quantized wires is calculated. The interband transitions between the size-quantized subbands are considered. It is shown that, in the intermediate states, electron-hole pairs ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14c42410f10d74428ff3e640612a0a68
https://doi.org/10.3103/s106837551001014x
https://doi.org/10.3103/s106837551001014x
Autor:
E. U. Arzikulov, I. P. Parmankulov
Publikováno v:
Surface Engineering and Applied Electrochemistry. 44:504-507
Experimental results related to the research of photocurrent vibrations induced by IR light in silicon with quantum dots are presented. It is shown that the large amplitude of the vibrations (up to 1 A) and the depth of the modulation (∼100%) obser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a33c5dbd7dd2735d44fafeeccf241d58
https://doi.org/10.3103/s1068375508060148
https://doi.org/10.3103/s1068375508060148
Autor:
E. U. Arzikulov, B. Eshpulatov
Publikováno v:
Surface Engineering and Applied Electrochemistry. 44:165-168
The dimensional phonon resonances in dimensionally-quantum semiconductor wires are considered. It is supposed that the absorption of light is caused by electron transitions between dimensionally-quantum subbands in potential wells with the participat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0767b8fa9a0e464579b51cde46b8234
https://doi.org/10.3103/s1068375508020154
https://doi.org/10.3103/s1068375508020154
Publikováno v:
Journal of Communications Technology and Electronics. 52:1054-1057
The effect of phosphorus impurities on the electronic structure of silicon single crystals and SiO2: Si nanocomposites is studied. The SiO2: Si structures with phosphorus impurities that are annealed over 2 h at a temperature of 1000°C exhibit an in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79ba90458c3869aa62fafa2bef730646
https://doi.org/10.1134/s106422690709015x
https://doi.org/10.1134/s106422690709015x
Publikováno v:
Semiconductors. 34:171-173
Silicon samples doped with boron and compensated by manganese were studied. The conditions for excitation of self-sustained oscillations were established and the parameters of these oscillations were determined.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::873d37e4bfcdee941491fc1f37e2d6c1
https://doi.org/10.1134/1.1187929
https://doi.org/10.1134/1.1187929
Autor:
Arzikulov, E. U., Xasanov, X., Eshmamatov, S. K., Akhrorov, S. Q., Toshboyev, M. D., Quvondiqov, Sh. J., Bobonov, D. T.
Publikováno v:
Metallophysics & Advanced Technologies / Metallofizika i Novejsie Tehnologii; Aug2022, Vol. 44 Issue 8, p1003-1012, 10p
Autor:
Arzikulov, E., Parmankulov, I.
Publikováno v:
Surface Engineering & Applied Electrochemistry; Dec2008, Vol. 44 Issue 6, p504-507, 4p
Autor:
Eshpulatov, B., Arzikulov, E.
Publikováno v:
Surface Engineering & Applied Electrochemistry; Apr2008, Vol. 44 Issue 2, p165-168, 4p
Autor:
Arzikulov, E., Ruzimuradov, Zh.
Publikováno v:
Journal of Communications Technology & Electronics; Sep2007, Vol. 52 Issue 9, p1049-1053, 5p