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pro vyhledávání: '"E. Tsumura"'
Akademický článek
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Publikováno v:
IEEE Transactions on Electron Devices. 47:2255-2260
The effect of MESFET structure on the frequency dispersion of drain conductance (g/sub d/) was examined, It was found that a shorter gate length, lower buried p-layer concentration, lower sheet resistance of n/sup +/ layer, and thinner active layer t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c19369b147e699b3fdf4390842ea85d
https://doi.org/10.1109/16.887005
https://doi.org/10.1109/16.887005
Publikováno v:
IEEE Transactions on Electron Devices. 46:38-47
GaAs MESFETs with advanced LDD structure have been developed by using a single resist-layered dummy gate (SRD) process. The advanced LDD structure suppresses the short channel effects, and reduces source resistance, while maintaining a moderate break
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d995ddf647411e0eee9e293c2e8bb5c2
https://doi.org/10.1109/16.737439
https://doi.org/10.1109/16.737439
Autor:
Mitsuaki Nishie, Hiromi Kurashima, H. Go, E. Tsumura, N. Nishiyama, T. Inujima, Yasuki Mikamura
Publikováno v:
1999 Proceedings. 49th Electronic Components and Technology Conference (Cat. No.99CH36299).
In the growing optical communication industry, one of the hottest segments is the emergence of small form factor (SFF) optical systems. Under high port density, low cost and utilities, it has an attractive feature and is expected to be the future sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70d0c6a0f31af31b3d1ebc930c9eab68
https://doi.org/10.1109/ectc.1999.776234
https://doi.org/10.1109/ectc.1999.776234
Publikováno v:
1992 Proceedings 42nd Electronic Components & Technology Conference.
An extremely compact PIN optical receiver with a GaAs IC chip set (a preamplifier IC, a main amplifier IC, and an ECL buffer IC) has been developed. The unique on-chip variable transimpedance circuit of the preamplifier IC can prevent overload on a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1caae2ed2ed86ee4e2fdc7352ca2697
https://doi.org/10.1109/ectc.1992.204240
https://doi.org/10.1109/ectc.1992.204240
Publikováno v:
Proceedings IECON '91: 1991 International Conference on Industrial Electronics, Control and Instrumentation.
A GaAS IC chip set, which is ideal for a compact optical receiver of gigabit data rates, was developed, comprising a transimpedance amplifier (preamplifier) IC, a limiting amplifier (main amplifier) IC, and an ECL (emitter coupled logic) buffer IC. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3bc9b78ff4204025b243c9b604105ef
https://doi.org/10.1109/iecon.1991.238942
https://doi.org/10.1109/iecon.1991.238942
Publikováno v:
1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206).
The standardization task of gigabit Ethernet by IEEE802.3z working group is attracting a great deal of attention. The demands for the modules compliant with the standardized specification will be increased. We have successfully developed gigabit fibe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48148e818822fd66524996b7fefa0ab0
https://doi.org/10.1109/ectc.1998.678872
https://doi.org/10.1109/ectc.1998.678872
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).
This paper describes the effect of MESFET structures on frequency dispersion of drain conductance (g/sub d/). The frequency dispersion of g/sub d/ is found to be affected by gate length, buried p-layer concentration, n/sup +/ sheet resistance, and ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f31882c9048c224cec496f19a4af10f2
https://doi.org/10.1109/gaas.1998.722640
https://doi.org/10.1109/gaas.1998.722640
Akademický článek
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Akademický článek
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