Zobrazeno 1 - 10 of 17 pro vyhledávání: '"E. T. Yu"'
1
Akademický článek
Angular dependence of light trapping in In0.3Ga0.7As/GaAs quantum-well solar cells.
Autor: X. H. Li, P . C. Li, D. Z. Hu, Schaadt, D. M., E. T. Yu
Publikováno v: Journal of Applied Physics; 2014, Vol. 115 Issue 4, p1-8, 8p, 1 Color Photograph, 1 Black and White Photograph, 2 Diagrams, 1 Chart, 3 Graphs
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2
High-density nano-pillar SiOx-based resistive switching memory using nano-sphere lithography to fabricate a one diode - one resistor (1D-1R) architecture
Autor: Burt Fowler, M. C. Chen, Ting-Chang Chang, Kuan-Chang Chang, E. T. Yu, Y. C. Chen, Tsung-Ming Tsai, Fei Zhou, J.C. Lee, Li Ji, Yao-Feng Chang
Publikováno v: Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
A highly compact, one diode - one resistor (1D-1R) nano-pillar device architecture has been demonstrated using nano-sphere lithography (NSL) to fabricate SiO x -based resistive switching (RS) memory. The intrinsic SiO x -based resistive switching ele
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2d0c4b73800c323506e7f725dd429bc1
https://doi.org/10.1109/vlsi-tsa.2014.6839674
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5
Akademický článek
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6
Analysis of localized charge trapping behavior in AlGaN/GaN heterostructures
Autor: K. V. Smith, E. T. Yu
Publikováno v: 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498).
Long-time-constant charge trapping behavior in Al/sub x/Ga/sub 1-x/N/GaN heterostructure field effect transistor epitaxial layer structures is probed using scanning capacitance microscopy. Localized charged areas, induced by scanning with relatively
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4f61dc99ddba0f395d90831f4362cd65
https://doi.org/10.1109/iscs.2000.947119
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7
Advanced Processing for High-Performance Optical and Electronic Systems
Autor: Y. Fainman, S. Esener, E. T. Yu
Our research on "Photonic Imaging Networks" is a part of the Graphics Server Consortium, which represents UCSD's continued participation in the DoD's Focused Research Initiative (FRI) program, supported by the BMDO via AFOSR.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3fed0f8cdab9607576ed03bc6f3f2751
https://doi.org/10.21236/ada371206
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8
Atomic-Scale View of Epitaxial Layers with Cross-Sectional Scanning Tunneling Microscopy
Autor: H. P. Meier, S. S. Iyer, M. B. Johnson, H. Salemink, E. T. Yu, U. Maier
Publikováno v: Semiconductor Interfaces at the Sub-Nanometer Scale ISBN: 9789401049009
This paper reports recent advances in the application of cross-sectional scanning tunneling microscopy and spectroscopy on semiconductor multilayer structures. The ability of this technique to obtain crystallographic, elemental, and electronic inform
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1fe736e2621d3eeb6c309d6068b56239
https://doi.org/10.1007/978-94-011-2034-0_22
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9
Atomic-Scale View of Epitaxial Layers with Cross-Sectional STM
Autor: H.W.M. Salemink, E. T. Yu, O. Albrektsen, M.B. Johnson
Publikováno v: Low-Dimensional Electronic Systems ISBN: 9783642848599
This paper reports the recent advances in the application of scanning tunneling microscopy and spectroscopy on cross sections of grown semiconductor multilayer structures. It is shown that with this technique we are able to derive crystallographic, e
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::735efb51cd6062c8e9e1fdb6423af057
https://doi.org/10.1007/978-3-642-84857-5_10
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10
Nanoscale current transport in epitaxial SrTiO[sub 3] on n[sup +]-Si investigated with conductive atomic force microscopy
Autor: E. T. Yu, D. G. Schlom, D. M. Schaadt, V. Vaithyanathan
Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:2030
We have used conductive atomic force microscopy to image the nanoscale current distribution in SrTiO3 grown epitaxially on n+-Si by molecular beam epitaxy. Topographic and current images were obtained simultaneously in contact mode with a bias voltag
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f40e37fff161ea14277e9875fb159491
https://doi.org/10.1116/1.1768529
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