Zobrazeno 1 - 10
of 11
pro vyhledávání: '"E. T. Ryan"'
Autor:
R. S. Smith, E. T. Ryan, C.-K. Hu, K. Motoyama, N. Lanzillo, D. Metzler, L. Jiang, J. Demarest, R. Quon, L. Gignac, C. Breslin, A. Giannetta, S. Wright
Publikováno v:
AIP Advances, Vol 9, Iss 2, Pp 025015-025015-9 (2019)
The applicability of the Fuchs-Sondheimer and Mayadas-Shatzkes scattering models below the 14nm node with wide interconnect trenches of variable aspect ratio is investigated. The aspect ratio of these lines was varied between 1.2, 1.8, and 2.5; and t
Externí odkaz:
https://doaj.org/article/b03f9aa2883f46f1aba4bb951eb519e1
Autor:
H. Oguma, T. Bolom, Y. Oda, S. O. Kim, C. Child, S. Allen, G. Bonilla, R. Schiwon, B. Kim, G. Osborne, B. Sundlof, T. Takewaki, E. Kaltalioglu, A. Grill, Q. Fang, D. Edelstein, H. Aizawa, T. Oki, B. Engel, A. Thomas, G. Ribes, S. Hirooka, G. Biery, K. Fujii, S. Molis, H. Sheng, R. Augur, M. Pallachalil, H. Shobha, D. Restaino, H. Masuda, J. H. Ahn, D. Kioussis, Terry A. Spooner, G. Zhang, L. Clevenger, Chao-Kun Hu, R. Quon, Stephen M. Gates, A. Simon, B. Hamieh, Paulo Ferreira, S. M. Singh, E. T. Ryan, R. Sampson, T. Fryxell, A. Ogino, H. Minda, B. Sapp, Richa Gupta, C. Labelle, T. Nogami, E. Wornyo, E. Shimada, T. Daubenspeck, T. J. Tang, T. Shaw, D. Permana, R. Srivastava
Publikováno v:
Microelectronic Engineering. 92:42-44
A cost effective 28nm CMOS Interconnect technology is presented for 28nm node high performance and low power applications. Full entitlement of ultra low-k (ULK) inter-level dielectric is enabled. Copper wiring levels can be combined up to a total of
Publikováno v:
Physical Review B. 60:R5157-R5160
Depth-profiled positronium lifetime spectroscopy is used to probe the pore characteristics (size, distribution, and interconnectivity) in porous, low-dielectric silica films. The technique is sensitive to the entire void volume, both interconnected a
Publikováno v:
AIP Advances. 6:075012
This work addresses the effect of ultraviolet radiation of wavelengths longer than 250 nm on Si-CH3 bonds in porous low-k dielectrics. Porous low-k films (k = 2.3) were exposed to 4.9 eV (254 nm) ultraviolet (UV) radiation in both air and vacuum for
Autor:
Deepika Priyadarshini, Son van Nguyen, Hosadurga k Shobha, E. T. Ryan, Steven M Gates, Huai Huang, James Chen, Eric Liniger, Stephan A Cohen, Chao-kun Hu, Anita Madan, Edward Adams, Steven E Molis, Thomas J Haigh, Griselda Bonilla, Theodorus Standaert, Donald F Canaperi, Alfred Grill
Publikováno v:
ECS Meeting Abstracts. :824-824
Continuous shrinking of the interconnect dimensions with each technology node requires reduction in RC (resistance-capacitance) delays. Reduction in capacitance requirement at 45nm node was met by introducing a k 2.4 inter-layer dielectric (ILD) at 2
Publikováno v:
Applied Physics Letters. 106:192905
Vacuum ultraviolet (VUV) photoemission spectroscopy is utilized to investigate the distribution of trapped charges within the bandgap of low dielectric constant (low-k) organosilicate (SiCOH) materials. It was found that trapped charges are continuou
Publikováno v:
Springer Series in Advanced Microelectronics ISBN: 9783642632211
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f95415a52bfb4a78f0cfa459d7eb5c50
https://doi.org/10.1007/978-3-642-55908-2_2
https://doi.org/10.1007/978-3-642-55908-2_2
Autor:
E T, Ryan
Publikováno v:
Current clinical topics in infectious diseases. 21
Publikováno v:
MRS Proceedings. 476
Using Si and GaAs substrates, the coefficient of thermal expansion (CTE) and the bi-axial modulus of thin hydrogen silsesquioxanes (HSQ) films are deduced by means of wafer curvature measurement. The same properties of plasma-enhanced CVD oxide are a
Publikováno v:
Journal of Analytical Toxicology. 33:183-183