Zobrazeno 1 - 10
of 20
pro vyhledávání: '"E. T. Kulatov"'
Autor:
S. N. Nikolaev, A. S. Semisalova, V. V. Rylkov, V. V. Tugushev, A. V. Zenkevich, A. L. Vasiliev, E. M. Pashaev, K. Yu. Chernoglazov, Yu. M. Chesnokov, I. A. Likhachev, N. S. Perov, Yu. A. Matveyev, O. A. Novodvorskii, E. T. Kulatov, A. S. Bugaev, Y. Wang, S. Zhou
Publikováno v:
AIP Advances, Vol 6, Iss 1, Pp 015020-015020-14 (2016)
The results of a comprehensive study of magnetic, magneto-transport and structural properties of nonstoichiometric MnxSi1-x (x ≈ 0.51-0.52) films grown by the Pulsed Laser Deposition (PLD) technique onto Al2O3(0001) single crystal substrates at T =
Externí odkaz:
https://doaj.org/article/2a6003830c8e449680c61385f7bfdcc2
Autor:
K. Motizuki, Yu. A. Uspenskii, A. Titov, E. T. Kulatov, Joel Cibert, Hitoshi Ohta, H. Nakayama, Henri Mariette
Publikováno v:
Journal of Magnetism and Magnetic Materials. 300:140-143
We calculated the total energy of ferromagnetic (FM) and antiferromagnetic (AFM) GaN:Mn, GaAs:Mn, Ge:Mn and Si:Mn with various distribution of Mn atoms. It is found that the formation of Mn–N–Mn–N chain-like fragments largely lowers the total e
Autor:
T. H. Geballe, James W. Reiner, Yu. A. Uspenskii, Lior Klein, Chong H. Ahn, E. T. Kulatov, S.V. Halilov, Aharon Kapitulnik, J. S. Dodge, L. Mieville, Hitoshi Ohta, M. R. Beasley
Publikováno v:
Physical Review B. 60:R6987-R6990
Optical and magneto-optical data from the perovskite itinerant ferromagnet ${\mathrm{SrRuO}}_{3}$ are presented and compared to fully relativistic, local spin-density approximation band-structure calculations. We find that the basic features of the o
Publikováno v:
Journal of Physics: Condensed Matter. 9:10159-10171
The electronic structure and optical properties of have been studied by the ab initio full-potential and full-relativistic LMTO methods. Calculations are employed to elucidate the influence of the stacking sequence on the band states and optical spec
Publikováno v:
Journal of Physics: Condensed Matter. 9:9043-9052
The influence of a high magnetic field on the band structure and optical conductivity of FeSi has been studied by the ab initio full-potential LMTO-PW and relativistic LMTO-ASA methods with an applied field included. It is found that the applied exte
Publikováno v:
Journal of Magnetism and Magnetic Materials. :248-250
Electronic structure and magnetic properties of Ga 1− x Mn x As, Ga 1− x Mn x N, Zn 1− x M x O, and Zn 1− x M x Te (M=V, Cr, Mn, Fe, and Co) diluted magnetic semiconductors (DMS) are calculated by the tight-binding LMTO method in the 64 atom
Autor:
S V Halilov, E T Kulatov
Publikováno v:
Semiconductor Science and Technology. 7:368-372
Within the density-functional theory, fully relativistic calculations of electron and optical spectra in chromium disilicide have been performed. CrSi2 is found to be an indirect-gap semiconductor; pressure therefore has a subtle effect on the gap. T
Autor:
S V Halilov, E T Kulatov
Publikováno v:
Journal of Physics: Condensed Matter. 3:6363-6374
Within the density-functional theory, including its local spin-density approximation, the fully relativistic calculations of electron, optical and magneto-optical spectra in some half-metallic ferromagnets and uranium monochalcogenide have been perfo
Autor:
Andrey Titov, Benjawan Kjornrattanawanich, Ye. A. Bugayev, E. T. Kulatov, Aleksandr V Vinogradov, V. V. Kondratenko, John F. Seely, Yu. A. Uspenskii, I. A. Artyukov, David L. Windt
Publikováno v:
SPIE Proceedings.
The extreme ultraviolet (EUV) optical constants ( ) and ( ) of amorphous carbon were determined on the basis of transmission measurements at =18-450 eV, the first-principles calculation of the dielectric tensor at < 25 eV, and the Kramers-Kronig calc
Autor:
E. T. Kulatov, Hitoshi Ohta
Publikováno v:
Journal of the Physical Society of Japan. 66:2386-2388
Influence of high magnetic fields and pressure on band structure of FeSi has been studied by the full-potential LMTO–ASA method. It is found that the semiconducting ground state of FeSi is stable in the wide volume range of ±15% of V / V exp . At