Zobrazeno 1 - 2
of 2
pro vyhledávání: '"E. T. J. M. Smeets"'
Autor:
J. Politiek, E. T. J. M. Smeets
Publikováno v:
Applied Physics Letters. 35:112-113
A silicon n+pπp+ reach‐through avalanche photodiode is described, where the p region is made by the channeling of aluminum atoms in 〈110〉 silicon. Effective noise factors of about 0.01 have been realized. The influence of the channeling on dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::561e13a550880b49c6dbecc0f29cb3bc
https://doi.org/10.1063/1.91059
https://doi.org/10.1063/1.91059
Publikováno v:
Journal of The Electrochemical Society. 124:1458-1459
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12f7b7b8cb22f5dc0b60515e0471287c
https://doi.org/10.1149/1.2133676
https://doi.org/10.1149/1.2133676