Zobrazeno 1 - 10
of 35
pro vyhledávání: '"E. Stein von Kamienski"'
Publikováno v:
Microelectronics Reliability. 54:1883-1886
Hot carrier (HC) injection, inducing drain and gate leakage current increase in 5 nm oxide p-channel LDMOS transistors, is investigated. Devices with two different drain implants are studied. At low gate voltage ( V GS ) and high drain voltage ( V DS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4c2312986a681941ec8b6e55c602b47
https://doi.org/10.1016/j.microrel.2014.07.048
https://doi.org/10.1016/j.microrel.2014.07.048
Publikováno v:
Materials Science Forum. :1001-1004
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5526fbca0270e1165770c5132ccfb84d
https://doi.org/10.4028/www.scientific.net/msf.264-268.1001
https://doi.org/10.4028/www.scientific.net/msf.264-268.1001
Publikováno v:
Diamond and Related Materials. 6:1420-1423
The interface trap density in oxides grown on 6H silicon carbide by remote plasma-enhanced chemical vapor deposition as well as by thermal oxidation is studied. This trap density is found to be drastically reduced by a plasma-assisted PDP (pre-deposi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a950026d63908da093b3bf40d7de62b5
https://doi.org/10.1016/s0925-9635(97)00048-4
https://doi.org/10.1016/s0925-9635(97)00048-4
Publikováno v:
Diamond and Related Materials. 6:1374-1377
Optical second-harmonic generation (SHG) is shown to be a powerful technique for identifying different polytypes of SiC-films deposited on 6H-SiC substrates. The rotational anisotropy of the SHG radiation reflected from homo-epitaxially grown 6H-SiC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59cc64de2aaca6716d9dcdec72fb1a0d
https://doi.org/10.1016/s0925-9635(97)00097-6
https://doi.org/10.1016/s0925-9635(97)00097-6
Publikováno v:
Diamond and Related Materials. 6:1489-1493
The development of reliable oxides built on SiC has become a very important issue with respect to either passivation processes or metal-oxide-semiconductor (MOS) applications. The aim of this paper is to present a detailed investigation of Fowler-Nor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33a1c087a3284f057396c45b253efccb
https://doi.org/10.1016/s0925-9635(97)00061-7
https://doi.org/10.1016/s0925-9635(97)00061-7
Publikováno v:
Semiconductor Science and Technology. 12:525-528
Fowler - Nordheim electron injections have been carried out in n-type silicon carbide (SiC) metal-oxide-semiconductor (MOS) capacitors. A systematic variation in the temperature and in the average oxide field applied during the stress allowed us to s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abaaeea6185f43977c417858263fa2c5
https://doi.org/10.1088/0268-1242/12/5/002
https://doi.org/10.1088/0268-1242/12/5/002
Publikováno v:
Materials Science and Engineering: B. 46:263-266
A large part of interface states in thermal oxides on n- and p-type 6H-SiC can be passivated by introducing hydrogen to the fabrication process. The oxide trap densities of passivated and unpassivated samples are investigated by charge injection expe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ffb983034334dbdb6d03b3a2ddcda34
https://doi.org/10.1016/s0921-5107(96)01987-3
https://doi.org/10.1016/s0921-5107(96)01987-3
Publikováno v:
Journal of Applied Physics. 79:2529-2534
Metal‐oxide‐semiconductor capacitors fabricated by dry and wet oxidation at 1150 °C of n‐type 6H–SiC exhibit a drastic negative charging during Fowler–Nordheim charge injection. This charging strongly depends on the fabrication conditions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed2ff69fc2462f6a8b22a8944c3ce099
https://doi.org/10.1063/1.361118
https://doi.org/10.1063/1.361118
Publikováno v:
Microelectronic Engineering. 28:201-204
Electrical properties of Oxides on 6HSiC are extracted from HFCV and QSCV measurements from 24°C to 300°C. Dit values calculated by the Terman and the HF-LF method differ in hight and position with respect to the bandgap. However, both methods r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::385a49be2e026d6079e1dcbf14471140
https://doi.org/10.1016/0167-9317(95)00043-8
https://doi.org/10.1016/0167-9317(95)00043-8
Publikováno v:
Diamond and Related Materials. 6:1497-1499
Interface traps in the SiO2-6H-SiC system can be passivated by a high temperature anneal in hydrogen or moistrous atmosphere. The passivation is very effective for deep donor like traps which are reduced towards the 1011 cm−2 eV−1 range. The elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b16e6b5552a20c31071d667251d6086
https://doi.org/10.1016/s0925-9635(97)00049-6
https://doi.org/10.1016/s0925-9635(97)00049-6