Zobrazeno 1 - 10 of 58 pro vyhledávání: '"E. Steimetz"'
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Growth optimization during III-nitride multiwafer MOVPE using real-time curvature, reflectance and true temperature measurements
Autor: T. Schenk, J.-T. Zettler, E. Steimetz, Veit Hoffmann, Arne Knauer, Markus Weyers, Frank Brunner
Publikováno v: Journal of Crystal Growth. 298:202-206
We employed a newly developed wafer-selective curvature, reflectance and temperature sensor (EpiCurveTT®) in an AIX2600HT Planetary Reactor®. Growth of GaN on sapphire as well as AlGaN and InGaN heterostructures with different material compositions
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::524d1bc6366d503ba018cb5582d427cb
https://doi.org/10.1016/j.jcrysgro.2006.10.186
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3
High temperature refractive indices of GaN
Autor: Philip A. Shields, E. Steimetz, Sergey Stepanov, Wang Nang Wang, Chaowang Liu, J.-T. Zettler, A. Gott, Evgeny Zhirnov
Publikováno v: physica status solidi c. 3:1884-1887
Undoped GaN (u-GaN) films were grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire substrates. In situ optical monitoring was applied to the growth process either using a LayTec EpiR-DA TT spectroscopic reflectometer or Fil
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::090fdb4569bad438661c2035e4d7875a
https://doi.org/10.1002/pssc.200565197
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Routine growth of InP based device structures using process calibration with optical in-situ techniques
Autor: N. Grote, J.-T. Zettler, E. Steimetz, P. Wolfram, W. Ebert
Publikováno v: Journal of Crystal Growth. 272:118-124
Combined reflectance R and reflectance anisotropy spectroscopy (RAS) was applied for in situ monitoring of composition and growth rate of MOVPE grown In 1− x Ga x As 1− y P y layers lattice matched to InP. The sum of the surface sensitive RAS sig
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1332f95b185c53424986744e700a7d02
https://doi.org/10.1016/j.jcrysgro.2004.09.060
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Growth of InGaAsP/InP-laser structures monitored by using RAS techniques
Autor: J.-T. Zettler, B. Henninger, W. Ebert, E. Steimetz, P. Wolfram
Publikováno v: Journal of Crystal Growth. 248:240-243
Reflectance and reflectance anisotropy spectroscopy (RAS) was applied to monitor the MOVPE growth of InGaAsP/InP layers in situ. The basic relationship between the measured optical in situ data and n(Si)- and p(Zn)-doping concentrations of InP, InGaA
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cb73474b840f534694940163feb34d2
https://doi.org/10.1016/s0022-0248(02)01858-4
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Optimizing the growth procedure for InAs quantum dot stacks by optical in situ techniques
Autor: T. Wehnert, F. Poser, E. Steimetz, Holm Kirmse, Wolfgang Richter, J.-T. Zettler, Wolfgang Neumann
Publikováno v: Journal of Crystal Growth. 221:592-598
The influence of the GaAs cap layer thickness on the surface morphology and stoichiometry of InAs quantum dot (QD) layers grown on GaAs(0 0 1) was investigated by real-time reflectance anisotropy spectroscopy (RAS) and ellipsometry. A redistribution
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5480e60486d763391918c4af5775f164
https://doi.org/10.1016/s0022-0248(00)00784-3
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GaAs cap layer growth and In-segregation effects on self-assembled InAs-quantum dots monitored by optical techniques
Autor: T. Wehnert, E. Steimetz, K. Haberland, J.-T. Zettler, W. Richter
Publikováno v: Journal of Crystal Growth. 195:530-539
The overgrowth of InAs islands by a GaAs cap layer has been investigated by optical in situ measurements at various growth conditions. A better smoothing of the surface has been found for low growth rates. This effect is attributed to a larger diffus
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0947a53592f7c1cc729022a06fef1c48
https://doi.org/10.1016/s0022-0248(98)00650-2
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Response of the surface dielectric function to dynamic surface modifications: application of reflectance anisotropy spectroscopy and spectroscopic ellipsometry
Autor: Markus Pristovsek, E. Steimetz, T. Trepk, M. Zorn, J.-T. Zettler, A. Shkrebtii, Wolfgang Richter
Publikováno v: Thin Solid Films. :537-543
Both spectroscopic ellipsometry (SE) and reflectance anisotropy spectroscopy (RAS) are able to measure a specific dielectric response of the few uppermost atomic layers of a III-V semiconductor when the surface conditions are changed. The sensitivity
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::501646e1ccdca58405501be490ef0cdc
https://doi.org/10.1016/s0040-6090(97)00880-8
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On the development of InAs on GaAs(001) as measured by reflectance anisotropy spectroscopy: continuous and islanded films
Autor: Wolfgang Richter, Zbigniew Sobiesierski, E. Steimetz, T. Zettler, David I. Westwood
Publikováno v: Applied Surface Science. :347-351
Reflectance anisotropy spectroscopy (RAS) has been used to monitor the formation and development of InAs islands grown onto GaAs(001) substrates. It is shown by time resolved measurements that entirely different responses are measured at different ph
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::918cd8956dda876e191b33447856f021
https://doi.org/10.1016/s0169-4332(97)00525-4
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