Zobrazeno 1 - 10
of 48
pro vyhledávání: '"E. Shatkovskis"'
Publikováno v:
Acta Physica Polonica A. 122:1121-1124
This work presents porous silicon technology, adapted to improve the characteristics of monocrystalline silicon solar cell. This is achieved by taking advantage of properties provided by porous silicon technology in production of diverse structures i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a60a18ca6b8ca340a0483153b8c8dbb9
https://doi.org/10.12693/aphyspola.122.1121
https://doi.org/10.12693/aphyspola.122.1121
Publikováno v:
Lithuanian Journal of Physics. 51:143-146
Attempts to use microporous silicon structures in detection of microwave radiation were investigated. Point-contact-like samples containing microporous silicon layers were manufactured using traditional technique of electrochemical etching of p-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ed0c9da762e38ee7c99c738d14874de
https://doi.org/10.3952/lithjphys.51202
https://doi.org/10.3952/lithjphys.51202
Publikováno v:
Acta Physica Polonica A. 114:761-767
The frequency spectra of sign inverted photomagnetoelectric responses in narrow gap semiconductors InSb, InAs, and Cd0.2Hg0.8Te, excited by nanosecond laser light pulses, were used for calculation of induced electromagnetic radiation frequency spectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07a49a32868bbd7180b4c9d615765922
https://doi.org/10.12693/aphyspola.114.761
https://doi.org/10.12693/aphyspola.114.761
Publikováno v:
Lithuanian Journal of Physics. 47:169-173
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91af44bf22f323178bdf9e9d9e9ea489
https://doi.org/10.3952/lithjphys.47211
https://doi.org/10.3952/lithjphys.47211
Autor:
A. Česnys, E. Shatkovskis
Publikováno v:
Semiconductors. 38:644-647
The long-wavelength edge of the radiation spectrum of hot electron-hole plasma induced in indium arsenide by neodymium laser pulses is studied. The shape of the long-wavelength edge is nearly exponential and is independent of the pump power in the ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8107c7725ba6e194549ab1fa219566bb
https://doi.org/10.1134/1.1766364
https://doi.org/10.1134/1.1766364
Publikováno v:
Medžiagotyra, Vol 18, Iss 3, Pp 220-222 (2012)
Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50552627f7f581ac0d55dbb61fc1ad2b
http://matsc.ktu.lt/index.php/MatSc/article/view/2428
http://matsc.ktu.lt/index.php/MatSc/article/view/2428
Autor:
Renata Boris, Valentin Antonovič, J. Stupakova, J. Keriene, V. Zagadskij, R. Mitkevičius, E. Shatkovskis, A. Baradinskaite, A. Jukna
Publikováno v:
SPIE Proceedings.
The electrochemical etching of porous silicon offers many diverse opportunities for production of complex porous silicon structures located not only on the surface but also in a bulk of the silicon devices. A specific technological regime, the photo-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bac4f8d3c8b560351f78a44305fac65
https://doi.org/10.1117/12.2083927
https://doi.org/10.1117/12.2083927
Autor:
E. Shatkovskis
Publikováno v:
Journal of Porous Materials. 7:315-318
An experimental investigation of the general characteristics of nonradiative and radiative recombination of charge carriers in strongly excited porous silicon is presented. It is shown that photoconductivity, photomagnetoelectric effect, quantum yiel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e9f79bb9f0e42f72b1b770f46c31523
https://doi.org/10.1023/a:1009669122679
https://doi.org/10.1023/a:1009669122679
Autor:
E. Shatkovskis
Publikováno v:
physica status solidi (b). 213:189-195
The photoluminescence of n-type indium arsenide was investigated under excitation by neodymium laser pulse radiation at the temperature of 100 K. Superluminescence by interband radiative transitions was observed. A rapid shift of the superluminescenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d661d4ee48838d049d7ecf6f21db3a9
https://doi.org/10.1002/(sici)1521-3951(199905)213:1<189::aid-pssb189>3.0.co
https://doi.org/10.1002/(sici)1521-3951(199905)213:1<189::aid-pssb189>3.0.co
Autor:
E. Shatkovskis
Publikováno v:
Materials Science Forum. :299-302
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a6eaee8014e04fe43b27964f7681eeb
https://doi.org/10.4028/www.scientific.net/msf.297-298.299
https://doi.org/10.4028/www.scientific.net/msf.297-298.299