Zobrazeno 1 - 10
of 74
pro vyhledávání: '"E. Selvig"'
Publikováno v:
Journal of Electronic Materials. 48:6099-6107
HgCdTe films grown by liquid phase epitaxy were passivated with CdTe grown by molecular beam epitaxy. A series of annealing tests with different temperatures and durations were then carried out in order to reach a two-fold goal: to smooth the gradien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acf42c720e8708f00a1a00bd5fca4d20
https://doi.org/10.1007/s11664-019-07415-z
https://doi.org/10.1007/s11664-019-07415-z
Autor:
Kjell Ove Kongshaug, R. Haakenaasen, Oda Lauten, Runar Wattum Hansen, Eivind Jülke Røer, E. Selvig
Publikováno v:
Journal of Electronic Materials
We have studied state-of-the-art CdZnTe (211)B and (111)B substrates and compared them to each other and to substrates from an alternative vendor. The CdZnTe surface has been characterized both as-received and after growth preparation procedures usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::724bab95db1d54b41e26d0d470832c7f
https://hdl.handle.net/11250/2722924
https://hdl.handle.net/11250/2722924
Autor:
Kjell Ove Kongshaug, E. Selvig, R. Haakenaasen, L. Trosdahl-Iversen, C. R. Tonheim, J. B. Andersen, T. Lorentzen, Paul Gundersen
Publikováno v:
Journal of Electronic Materials. 39:893-902
This paper presents results from recent work on molecular beam epitaxy growth of HgCdTe at the Norwegian Defence Research Establishment (FFI), including studies of material properties and fabrication of photodiodes and nanostructures. Systematic stud
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e9a01f40b9d002cd0c535493491c197
https://doi.org/10.1007/s11664-010-1211-7
https://doi.org/10.1007/s11664-010-1211-7
Autor:
Torbjørn Skauli, S. Foss, V. Hansen, L. Trosdahl-Iversen, S. Hadzialic, Matthew P. Halsall, E. Selvig, Johan Taftø, Harald Steen, J.E. Tibballs, R. Haakenaasen, J. Orr
Publikováno v:
Journal of Electronic Materials. 37:1311-1317
HgTe nanowires have been grown by molecular beam epitaxy (MBE). They are nucleated at Au particles on Si or GaAs substrates and subsequently self-organize and grow laterally on the surface into 20–50 nm wide, 0.5–1 μm long twisted, but single-cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fd319f99ea97541616d5acd675ecf38
https://doi.org/10.1007/s11664-008-0414-7
https://doi.org/10.1007/s11664-008-0414-7
Publikováno v:
Journal of Electronic Materials. 37:1444-1452
The defect morphology in HgTe and CdHgTe was studied in (211)B-oriented layers grown in a 20°C temperature range around the optimal growth temperature. The density of defects varies strongly with the growth temperature. In HgTe, the shape of the mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a260a7799ed2bb256dada18400ae1d4d
https://doi.org/10.1007/s11664-008-0447-y
https://doi.org/10.1007/s11664-008-0447-y
Autor:
Harald Steen, A D van Rheenen, V. Hansen, Torbjørn Skauli, E. Selvig, R. Haakenaasen, S. Hadzialic, L. Trosdahl-Iversen, T. Lorentzen
Publikováno v:
Physica Scripta. :115-120
HgTe nanowires nucleated by Au particles have been grown on Si and GaAs substrates by molecular beam epitaxy. The wires are polycrystalline. They evolve from crooked to straight during growth and have rounded to rectangular cross-sections. The widths
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54298e8aaaf4a51a556a666689c6af04
https://doi.org/10.1088/0031-8949/2006/t126/026
https://doi.org/10.1088/0031-8949/2006/t126/026
Autor:
A H Vaskinn, T. Lorentzen, Neil Gordon, Harald Steen, Torbjørn Skauli, E. Selvig, L. Trosdahl-Iversen, D. Hall, R. Haakenaasen, A D van Rheenen
Publikováno v:
Physica Scripta. :31-36
CdxHg1−xTe layers with bandgap in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) regions were grown by molecular beam epitaxy, and one-dimensional (1D) and two-dimensional (2D) arrays of planar photodiodes were fabricated by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02f89d530c1b9e8e050b6d73494363ac
https://doi.org/10.1088/0031-8949/2006/t126/007
https://doi.org/10.1088/0031-8949/2006/t126/007
Publikováno v:
Physica Scripta. :110-114
Molecular beam epitaxy has been used to grow GaInAsSb/AlGaAsSb multiple-quantum-well (MQW) structures. Growth has been interrupted at the interfaces between the wells and the barriers. During the growth interruptions, the interfaces have been exposed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::752e21a8c83a71bd5a20199b6bbcbe77
https://doi.org/10.1088/0031-8949/2006/t126/025
https://doi.org/10.1088/0031-8949/2006/t126/025
Autor:
Neil Gordon, T. Lorentzen, D. Hall, H. Syversen, R. Haakenaasen, Harald Steen, L. Trosdahl-Iversen, E. Selvig, A D van Rheenen
Publikováno v:
Scopus-Elsevier
Imaging one-dimensional (1-D) and two-dimensional (2-D) arrays of mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) planar photodiodes were fabricated by ion milling of vacancy-doped molecular beam epitaxy CdxHg1−xTe layers. Sixty-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::370daa4c497c93d7721d16497e5e663c
https://doi.org/10.1007/s11664-005-0043-3
https://doi.org/10.1007/s11664-005-0043-3
Publikováno v:
IEEE Photonics Technology Letters. 23:36-38
Enhancement of light emission from HgCdTe due to surface patterning has been studied by means of photoluminescence (PL) spectroscopy. A triangular pattern of circular holes was etched into the CdTe layer grown on top of HgCdTe thin-film and multiple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c99fee07ab4a8ef2618edb20000995a
https://doi.org/10.1109/lpt.2010.2090517
https://doi.org/10.1109/lpt.2010.2090517