Zobrazeno 1 - 10
of 36
pro vyhledávání: '"E. S. Snow"'
Publikováno v:
Journal of Applied Physics. 84:1133-1139
The design criteria for large transconductance/high output impedance or high-gain operation of metal-oxide tunneling transistors is given. The dependence of the gate control on the aspect ratio of thickness to width of the tunneling oxide is investig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ecd356e0140cb90f4bf0e395f559312
https://doi.org/10.1063/1.368114
https://doi.org/10.1063/1.368114
Autor:
P. M. Campbell, E. S. Snow
Publikováno v:
Materials Science and Engineering: B. 51:173-177
We describe a simple and reliable process for the fabrication of nanometer-scale structures by using the local electric field of a conducting tip atomic force microscope to write surface oxide patterns by local anodic oxidation. These oxide patterns
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e95767b0c6f2a17f5aec99f8762a171
https://doi.org/10.1016/s0921-5107(97)00255-9
https://doi.org/10.1016/s0921-5107(97)00255-9
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:1455-1459
Two approaches were developed using an ambient atomic force microscope (AFM) to pattern metal in either positive or negative tone. The difference in surface chemical reactivity between exposed and unexposed regions was used to selectively attach coll
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d0a1fe7b15bc6c4f7bb46bc1e89c148
https://doi.org/10.1116/1.580561
https://doi.org/10.1116/1.580561
Publikováno v:
Nanotechnology. 7:434-437
AFM-generated surface modifications are used to fabricate free-standing Si nanostructures. We employ the local electric field of a metal-coated AFM tip which is operated in air to selectively oxidize regions of a H-passivated Si surface. The resultin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25285c5deead350f72dedd3789ddad96
https://doi.org/10.1088/0957-4484/7/4/024
https://doi.org/10.1088/0957-4484/7/4/024
Autor:
P M Campbell, E S Snow
Publikováno v:
Semiconductor Science and Technology. 11:1558-1562
We describe a simple and reliable process for the fabrication of nanometre-scale silicon structures by using the local electric field of a proximal probe tip (either an STM or a conducting tip atomic force microscope) to write surface oxide patterns
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4a72492dbab234f37078d23d0633fb6
https://doi.org/10.1088/0268-1242/11/11s/018
https://doi.org/10.1088/0268-1242/11/11s/018
Autor:
C. R. K. Marrian, E. S. Snow
Publikováno v:
Microelectronic Engineering. 32:173-189
The advantage of a low voltage approach to lithography and surface modification is that a more spatially localized energy deposition can be achieved than with a focused high energy charged particle beam. Proximal probes, such as the scanning tunnelli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::603228bfdfc8893284ed98f92eed0882
https://doi.org/10.1016/0167-9317(96)00005-6
https://doi.org/10.1016/0167-9317(96)00005-6
Publikováno v:
Applied Physics Letters. 85:4172-4174
We report the scaling behavior of 1∕f noise in single-walled carbon nanotube devices. In this study we use two-dimensional carbon nanotube networks to explore the geometric scaling of 1∕f noise and find that for devices of a given resistance the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bc9e8a14e44015558a7a1ec8a8f8607
https://doi.org/10.1063/1.1812838
https://doi.org/10.1063/1.1812838
Publikováno v:
Applied Physics Letters. 83:4026-4028
We report the use of carbon nanotubes as a sensor for chemical nerve agents. Thin-film transistors constructed from random networks of single-walled carbon nanotubes were used to detect dimethyl methylphosphonate (DMMP), a simulant for the nerve agen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c8b18a8b8c05363824dfb0de020e21e
https://doi.org/10.1063/1.1626265
https://doi.org/10.1063/1.1626265
Publikováno v:
Applied Physics Letters. 82:2145-2147
We report on the transport properties of random networks of single-wall carbon nanotubes fabricated into thin-film transistors. At low nanotube densities (∼1 μm−2) the networks are electrically continuous and behave like a p-type semiconductor w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b90c31beae7100961e94b2dfb459694
https://doi.org/10.1063/1.1564291
https://doi.org/10.1063/1.1564291
Publikováno v:
Solid-State Electronics. 37:583-586
We report the fabrication of nanometer-scale conducting silicon wires by the STM-induced modification of a passivated silicon (100) surface followed by a selective liquid etch. The modified surface layer is a thin oxide a few monolayers thick which a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b24b0f7a6901fea45dda40b4cbda4726
https://doi.org/10.1016/0038-1101(94)90252-6
https://doi.org/10.1016/0038-1101(94)90252-6