Zobrazeno 1 - 10
of 227
pro vyhledávání: '"E. S. R. Gopal"'
Publikováno v:
Journal of Non-Crystalline Solids. 447:178-182
Bulk (GeTe4)(100 - x)(As2Se3)(x)(0 15 exhibit single stage crystallization. Annealing of the glasses results into hexagonal GeTe and Te structures for 0 = 50) As2Te3 phase along with Te has been observed. Raman studies indicate the presence of GeSe2,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9df917cd3fbac149e10502f78679fc3
https://doi.org/10.1016/j.jnoncrysol.2016.06.014
https://doi.org/10.1016/j.jnoncrysol.2016.06.014
Publikováno v:
Key Engineering Materials. 702:37-42
Chalcogenide glasses switches from a high-resistance (OFF) state to a low-resistance (ON) state at a threshold voltage (Vth) under high electric fields. This electrical switching is of two types: (i) Threshold switching and (i) memory switching. Thre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c0af4bcfe4386918931c66b4d617026
https://doi.org/10.4028/www.scientific.net/kem.702.37
https://doi.org/10.4028/www.scientific.net/kem.702.37
Publikováno v:
Key Engineering Materials. 702:43-47
Amorphous solids prepared from their melt state exhibit glass transition phenomena upon heating. Derivatives of volume like viscosity, specific heat and thermal expansion coefficient show rapid changes at the glass transition temperature (Tg). In gen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b7a16574e0c378b1290f782d80137d6
https://doi.org/10.4028/www.scientific.net/kem.702.43
https://doi.org/10.4028/www.scientific.net/kem.702.43
Publikováno v:
AIP Conference Proceedings.
Ge2Sb2Te5 popularly known as GST is being explored for non-volatile phase change random access memory(PCRAM) applications. Under high electric field, thin films of amorphous GST undergo a phase change from amorphous to crystalline with a high contras
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7278154e00e187f20cd8da332fc367c9
https://doi.org/10.1063/1.5032933
https://doi.org/10.1063/1.5032933
Publikováno v:
IndraStra Global.
Electrical switching in (GeTe4)(100 - x)(As2Se3)(x) glasses in the range (0 10. Irrespective of the switching type, all the compositions in the system show crystallization upon heating. Samples annealed at their respective crystallization temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9ed3c23eb273d0a92bd31998e485cf4
https://igi.indrastra.com/items/show/211591
https://igi.indrastra.com/items/show/211591
Publikováno v:
Integrated Ferroelectrics. 117:40-48
Nanostructured carbon nitride films were prepared by pyrolysis assisted chemical vapour deposition. A two zone furnace with a uniform temperature over a length of 20 cm in both the zones was built. The precursor Azabenzimidazole (C6H5N3) taken in a q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33641d1f46f281552e479d27c2c6b738
https://doi.org/10.1080/10584587.2010.489421
https://doi.org/10.1080/10584587.2010.489421
Publikováno v:
Bulletin of Materials Science. 31:15-18
Conjugated polymers are promising materials for electrochromic device technology. Aqueous dispersions of poly(3,4-ethylenedioxythiophene)-(PEDOT) were spin coated onto transparent conducting oxide (TCO) coated glass substrates. A seven-layer electroc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::453a08f64fa32d18fd7ca134c132a0c5
https://doi.org/10.1007/s12034-008-0003-7
https://doi.org/10.1007/s12034-008-0003-7
Autor:
D. Tonchev, Z. Aneva, T. W. Allen, Ray G. DeCorby, Safa Kasap, K. Kesava Rao, Z.G. Ivanova, E. S. R. Gopal, Rajamohan Ganesan
Publikováno v:
Journal of Non-Crystalline Solids. 353:1418-1421
The photoluminescence (PL) of a series of (GeS2)(80)(Ga2S3)(20) glasses doped with different amounts of Er (0.17, 0.35, 0.52, 1.05 and 1.39 at.%) at 77 and 4.2 K has been studied. The influence of the temperature on the emission cross-section of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c71b3b6375d9cbdb533dd0248298b3f
https://doi.org/10.1016/j.jnoncrysol.2006.10.066
https://doi.org/10.1016/j.jnoncrysol.2006.10.066
Publikováno v:
IndraStra Global.
Tin (II) sulphide (SnS), a direct band gap semiconductor compound, has recently received great attention due to its unique properties. Because of low cost, absence of toxicity, and good abundance in nature, it is becoming a candidate for future multi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc157da2e2a7aab23facff70da308d43
https://igi.indrastra.com/items/show/24118
https://igi.indrastra.com/items/show/24118
Autor:
N. Koteeswara Reddy, E. S. R. Gopal, K. P. Ramesh, K.T. Ramakrishna Reddy, V. Ganesan, M. Devika
Publikováno v:
Applied Surface Science. 253:1673-1676
Tin sulphide films have been deposited with an average thickness of 0.5 mm at different substrate temperatures. The surface structure and electrical resistivity of the films were investigated at room temperature. The surface profiles were examined fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9892fc5b6e084d78e453934265e95d24
https://doi.org/10.1016/j.apsusc.2006.03.005
https://doi.org/10.1016/j.apsusc.2006.03.005