Výsledky vyhledávání - "E. S. Obolenskaya"

Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices

Autor: E. S. Obolenskaya, Vladimir Kozlov, D. G. Pavelyev, A. P. Vasil’ev

Publikováno v: Semiconductors. 52:1448-1456

The radiation resistance to the gamma-neutron irradiation (~1 MeV) of diodes based on symmetric GaAs/AlAs 30-period superlattices is for the first time studied theoretically and experimentally. The model band diagram and equivalent circuit of the str

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3bbe3892eeeb2e46bfb710f5dfa780d0
https://doi.org/10.1134/s1063782618110192

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Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects

Autor: Vladimir Kozlov, S. V. Obolensky, I. Yu. Zabavichev, A. S. Puzanov, E. S. Obolenskaya, A. A. Potekhin

Publikováno v: Semiconductors. 51:1435-1438

The distributions of the radii of subclusters of radiation-induced defects and of the distances between the cores of these subclusters are calculated for Si, GaAs, and GaN. The features of the transport of hot charge carriers in the above materials u

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::63faf75c82d57391e38264d9702424b3
https://doi.org/10.1134/s1063782617110288

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Optimization of the superlattice parameters for THz diodes

Autor: E. S. Obolenskaya, S. V. Obolensky, Vladimir Kozlov, V.M. Ustinov, A. P. Vasil’ev, D. G. Pavelyev

Publikováno v: Semiconductors. 51:1439-1443

Previously, GaAs/AlAs superlattices with a small active area (~1 μm2) were used by us to design mixer diodes. It was established that these superlattices can efficiently be used in the terahertz (THz) range. It was theoretically and experimentally s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a2f1204cba9ec645e91ccf61937fe048
https://doi.org/10.1134/s1063782617110227

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Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account

Autor: S. V. Obolensky, Vladimir Kozlov, E. S. Obolenskaya, A. Yu. Churin, E. A. Tarasova

Publikováno v: Semiconductors. 50:1579-1583

Microwave-signal generation in planar Gunn diodes with a two-dimensional electron gas, in which we previously studied steady-state electron transport, is theoretically studied. The applicability of a control electrode similar to a field-effect transi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d2e92f2a7151b7bf95a0601fd2db7b05
https://doi.org/10.1134/s1063782616120149

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Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors

Autor: V. I. Egorkin, V. E. Zemliakov, A. V. Saharov, G. V. Medvedev, A. F. Zazul’nokov, E. A. Tarasova, A. V. Nezhenzev, E. E. Zavarin, E. S. Obolenskaya, S. V. Obolensky, V. V. Lundin, A. V. Hananova

Publikováno v: Semiconductors. 50:1574-1578

The sensitivity of classical n +/n – GaAs and AlGaN/GaN structures with a 2D electron gas (HEMT) and field-effect transistors based on these structures to γ-neutron exposure is studied. The levels of their radiation hardness were determined. A met

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::57f1b76ac7a3a279c898257a8222171d
https://doi.org/10.1134/s1063782616120216

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Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range

Autor: Yu. I. Koschurinov, S. V. Obolensky, V. M. Ustinov, D. G. Pavelyev, A. P. Vasil’ev, Vladimir Kozlov, E. S. Obolenskaya

Publikováno v: Semiconductors. 50:1526-1531

The electron transport in superlattices based on GaAs/AlAs heterostructures with a small number of periods (6 periods) is calculated by the Monte Carlo method. These superlattices are used in terahertz diodes for the frequency stabilization of quantu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::61af2d4158eedf7b06fb11e2f5950ebc
https://doi.org/10.1134/s1063782616110208

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On the radiation resistance of planar Gunn diodes with δ-doped layers

Autor: E. S. Obolenskaya, A. Yu. Churin, A. V. Murel, S. V. Obolensky, V. I. Shashkin

Publikováno v: Semiconductors. 49:1459-1467

The radiation resistance of planar Gunn diodes is investigated. Based on the results of measurements of the pulsed current–voltage characteristics and computer simulations it is shown that the use of δ layers of doping impurities contributes to th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b90b60b12c796d610c86d93ad1ac55db
https://doi.org/10.1134/s1063782615110160

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