Zobrazeno 1 - 10
of 49
pro vyhledávání: '"E. S. Nikonyuk"'
Autor:
M. I. Kuchma, I. M. Yuriychuk, E. S. Nikonyuk, V. L. Shlyakhovyĭ, Z. I. Zakharuk, A. I. Rarenko
Publikováno v:
Semiconductors. 42:1012-1015
The results of studying the temperature dependences of resistivity and the Hall coefficient in crystals of Cd1 − x Mn x Te alloys (0.02 0.06. An anomalous isothermal variation in the hole concentration by an amount from half to three orders of magn
Publikováno v:
Semiconductors. 42:514-517
n-Hg3In2Te6 single crystals with resistivity of 1–2 Ω cm used in photodiodes for the wavelength 1.55 μm are studied. It is shown that electrical conductivity of the material is controlled by donors of two types with ionization energies of 0.063 a
Publikováno v:
Semiconductors. 35:405-408
The results of electrical studies of CdTe crystals grown by the Bridgman-Stockbarger method and doped with Sb impurity to concentrations of 1017–3×1019 cm−3 were considered. An analysis of the temperature dependences of the Hall coefficient, the
Autor:
V.Z. Shlyakhovuy, E. S. Nikonyuk, M. I. Kuchma, V.M. Frasuniak, Z. I. Zakharuk, M. O. Kovalets
Publikováno v:
Journal of Crystal Growth. 161:186-189
By means of electrical and magnetic investigation of Yb-doped CdTe crystals, the following was established: (1) Additional shallow donors and paramagnetic centers are not introduced into the doping process; the hole conductivity of doped crystals is
Autor:
I. M. Yuriychuk, M. O. Kovalets, M. I. Kuchma, V. L. Shlyakhovyi, A. I. Savchuk, E. S. Nikonyuk, Z. I. Zakharuk
The temperature dependences (T = 80 - 420 K) of the concentration of charge carriers and the Hall mobility in undoped CdTe and CdTe:Gd single crystals grown by the Bridgman method are studied. It is found that the conductivity type of CdTe:Gd crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be2d22609e6153bfa5bfb934845738ec
http://dspace.nbuv.gov.ua/handle/123456789/118666
http://dspace.nbuv.gov.ua/handle/123456789/118666
We present the results of optical and electrophysical investigations of CdTe:Cr crystals. A model explaining a considerable shift of the fundamental absorbtion edge in the crystals into the long-wave region is proposed. It is found that the doping of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bddfd3b831b2c863dee4ee2ec12c821
http://dspace.nbuv.gov.ua/handle/123456789/118128
http://dspace.nbuv.gov.ua/handle/123456789/118128
Autor:
I. M. Rarenko, V. N. Babentsov, S. V. Svechnikov, Z. K. Vlasenko, Z. I. Zakharuk, V. L. Shlyakhovyi, E. S. Nikonyuk, A. I. Vlasenko
Publikováno v:
Semiconductors. 31:869-871
Acceptor defects, which control conductivity and recombination in Cd1−x MnxTe (0⩽x⩽0.1), have been observed experimentally and investigated by electric and luminescence methods. The energy levels of the defects and the composition dependence of
Publikováno v:
SPIE Proceedings.
Electro-physical properties of CdTe:Mn crystals depending on doping method were studied. Three doping schemes were used: I - Mn was introduced to the melt of stoichiometric CdTe; II -- Cd, Mn and Te components were loaded according to the Cd 1-x Mn x
Publikováno v:
Soviet Physics Journal. 19:921-924
The example of n-type CdTe∶Ge crystals is used to consider the scope for determining trap-ping-center parameters for photosensitive semiconductor crystals on the basis of the conditions for peaks in thermally stimulated photoconduction curves for t
Publikováno v:
Chemischer Informationsdienst. 8